Mouser Electronics is now stocking the new GaNEXUS gallium nitride, field-effect transistors (GaN FETs) from onsemi. The GaNEXUS GaN FETs leverage the wide-bandgap properties of GaN to deliver fast switching, low gate and output charge, plus enhanced efficiency for AI, data centres, industrial automation, robotics, and energy infrastructure applications.
The onsemi GaNEXUS GaN FETs, available from Mouser, enable higher operating frequencies, increased power density, and reduced magnetics in power conversion applications across low-, medium-, high-, and ultra-high-voltage ranges. The enhancement-mode discrete GaN high-electron-mobility transistors (HEMTs) offer a voltage range of 40 to 650V, including 650V GaNEXUS Smart GaN FETs with integrated protection to improve reliability and simplify system integration. GaNEXUS solutions are engineered to improve how modern power systems convert and manage energy, helping designers simplify design complexity, accelerate development and qualification, reduce thermal and cooling requirements, and optimise performance across the full power delivery chain.
In low- and medium-voltage systems, including AI servers, 48 V intermediate bus converters (IBCs), battery backup units (BBUs), and motor drives, GaNEXUS enables smaller magnetics, higher power density, improved efficiency, better thermal performance, improved control stability, and reduced switching losses. In higher voltage applications, such as AI power shelves, high-voltage DC-DC conversion, PFC, and LLC power stages, GaNEXUS enables up to 60% reduction in magnetics size in high-frequency AC DC and resonant stages, higher power density in PFC, LLC, and HV DC DC architectures, and efficiency gains in thermal and operating costs.
