The CHA8312-99F is a two-stage GaN HPA that operates from 8 to 12 GHz and provides 17 W output power, 50 percent power added efficiency, and 26 dB small signal gain.
The part is developed on a robust 0.15 µm gate length GaN on SiC HEMT process and is available as a bare die.
Ideal for defence applications, the amplifier is also suitable for a wide range of microwave applications and systems such as radar, test equipment and communication.
Additional key features include:
- @ +23 dBm input power
- Input return loss: >17 dB
- Output return loss: >11 dB
- DC bias: 20 V @ 320 mA
- Chip size: 3.99 mm x 3.12 mm x 0.07 mm