In stock at authorised distributor DigiKey is the Everspin Technologies’ PERSYST xSPI MRAM, a high reliability memory family engineered for aerospace, defence, new space, and other mission critical systems requiring robust data retention under extreme environmental and operational conditions.
Built on proven spin transfer torque magnetoresistive random access memory (STT MRAM) technology from Everspin, it provides true nonvolatility, fast random access, and industry leading endurance without batteries, refresh cycles, wear levelling, or data at risk states.
These PERSYST additions enhance the Everspin standard MRAM devices with additional screening and qualification steps tailored for high reliability environments.
Each device undergoes a 48 hour burn in process designed to identify and eliminate early life failures, improving mission duration reliability and enabling predictable long term performance.
Devices support operation across a -40 to +125°C temperature range, allowing them to operate in harsh thermal conditions commonly found in avionics modules, high altitude platforms, propulsion control systems, and high temperature industrial equipment.
They are built and tested to the AEC-Q100 Grade 1 specification.
To support radiation-exposed applications, Everspin provides a radiation characterisation report detailing total ionizing dose (TID) performance of over 1 Mrad, single event effects (SEE) testing, and relevant operating-limit data.
This reporting helps system designers assess parts for space, aerospace, medical, and other strategic grade programs that demand predictable behaviour in radiation environments.
As a drop in, high reliability extension of the PERSYST xSPI MRAM family, these devices provide a seamless path to modernising legacy FRAM, SRAM, and nvSRAM based systems. With virtually unlimited endurance and instant nonvolatility, these devices eliminate the complexities associated with Flash and EEPROM based solutions, simplifying firmware development while improving long term system resilience.
The combination of rugged design, enhanced screening and predictable performance across temperature and radiation conditions supports designers who cannot compromise on reliability.
These memory devices are available in 64, 128Mb, and additional densities.
No batteries, refresh cycles, or wear levelling is required.
