Alpha and Omega Semiconductor has launched a new high safe-operating-area MOSFET aimed at the increasingly demanding power requirements of AI servers, as chipmakers race to support higher current loads driven by advanced GPU and TPU architectures.
The California-based group said that its AOLV66935 device, a 100-volt MOSFET built on its proprietary AlphaSGT technology, is designed to improve the reliability and efficiency of 48-volt hot-swap systems used in data-centre and AI server racks. The component is housed in an LFPAK 8×8 package, which the company said is 60% smaller than the industry-standard TO-263 format, while offering higher current capability and improved thermal performance.
The device features low on-resistance — a maximum of 1.86 milliohms at 10 volts — which reduces conduction losses, enabling designers to use fewer components in parallel. Alpha and Omega said it has characterised the MOSFET at both 25°C and 125°C to assure performance under harsher operating conditions common in high-density server environments.
“To perform a 48-volt hot swap in AI servers, a MOSFET must offer high current capability as well as robust safe-operating-area performance and reliability,” said Peter H. Wilson, Senior Director of the MOSFET Product Line at Alpha and Omega. “We designed the AOLV66935 specifically for these requirements, and its low on-resistance helps customers manage tight space constraints.”
The part is manufactured in facilities certified to IATF 16949 standards, and the packaging is compatible with automated optical inspection processes widely used in high-volume electronics manufacturing.
The device is available immediately, with a lead time of between 14 and 16 weeks. In volumes of 1,000 units, it is priced at $3.60 each.
Founded on discrete and power-management technologies, Alpha and Omega supplies components for sectors including consumer electronics, data centres, AI servers, automotive systems, and industrial equipment. The company cautioned that forward-looking statements in its announcement are subject to risks, including semiconductor-market conditions and the performance of the new device in volume production.
