iDEAL Semiconductor unveils SuperQ MOSFET to boost battery safety and efficiency

iDEAL Semiconductor, a US-based developer of high-performance power silicon, has unveiled its SuperQ™ MOSFET technology, designed to address a longstanding challenge in high-voltage battery management systems (BMS): balancing efficiency with safety. The platform sets a new benchmark for short-circuit withstand capability (SCWC), a key metric for the BMS discharge switch. iDEAL Semiconductor, a US-based developer of high-performance power silicon, has unveiled its SuperQ™ MOSFET technology, designed to address a longstanding challenge in high-voltage battery management systems (BMS): balancing efficiency with safety. The platform sets a new benchmark for short-circuit withstand capability (SCWC), a key metric for the BMS discharge switch.

iDEAL Semiconductor, a US-based developer of high-performance power silicon, has unveiled its SuperQ MOSFET technology, designed to address a longstanding challenge in high-voltage battery management systems (BMS): balancing efficiency with safety. The platform sets a new benchmark for short-circuit withstand capability (SCWC), a key metric for the BMS discharge switch.

The move comes as high-voltage battery packs become increasingly common in e-mobility, drones, and professional power tools, where external short-circuit events can trigger current spikes in the thousands of amps. In these situations, the discharge MOSFET is the critical component that isolates the battery pack and prevents catastrophic failure.

“In high-energy packs, robustness is non-negotiable,” said Dr Phil Rutter, Vice President of Design at iDEAL Semiconductor. “Traditional MOSFET designs are forced to compromise between ultra-low RDS(on) for efficiency and the structural integrity needed to survive massive short-circuit currents. The SuperQ platform eliminates this compromise.”

Internal testing by iDEAL indicates that its SuperQ device, the iS15M2R5S1T (150V, 2.5mΩ, TOLL package), can withstand short-circuit currents of up to 800 amps, 1.4 times higher than a leading competitor, while maintaining ultra-low on-resistance. The company attributes the performance gain to a proprietary cell structure that maximises power density and structural integrity under extreme stress.

The technology also promises system-level benefits for battery designers. By handling higher short-circuit currents, the devices allow for a reduction of up to 50% in the number of MOSFETs used in parallel, lowering total component costs and simplifying board layout. The low RDS(on) reduces conduction losses, improving battery run-time and easing thermal management requirements.

The SuperQ portfolio is available immediately, with devices rated up to 200V, supporting battery platforms from 72V to over 144V.

iDEAL Semiconductor, headquartered in Lehigh Valley, Pennsylvania, develops next-generation silicon power devices. Its SuperQ technology uses conventional CMOS processes to deliver high efficiency without departing from traditional silicon benefits.

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