The TK17A80W uses Toshiba’s state-of-the-art single epitaxial process which, compared to multi epitaxial processes, delivers lower RDS(ON) at higher temperatures and reduces turn-off switching losses. This combination provides higher efficiency for power supplies and assists designers in minimising system size.
By reducing parasitic capacitance between gate and drain, the DTMOS IV super junction technology enables faster switching performance. The TK17A80W features typical input capacitance of 1450pF at 300V and 100kHz and maximum RDS(ON) of 0.3Ω. The MOSFET features maximum ratings of 800VDSS , ±30VGSS and 17A drain current.
Mass production will start this quarter for the TK17A80W in a fully isolated TO-220SIS package, with samples available now. Further performance options and TO-220, DPAK and IPAK packages will be announced later.
