The extensive family of 23 IGBTs utilizes trench thin wafer Field Stop technology to offer low and balanced conduction and switching losses. Co-packaged with a soft recovery low Qrr diode, the new devices are optimized for ultra-fast switching with 5µs short circuit rating and feature low VCE(ON) and positive VCE(ON) temperature coefficient for easy paralleling.
The new IGBTs are suitable for a wide range of switching frequencies and deliver higher system efficiency and rugged transient performance. In addition, the internal soft recovery diode improves system efficiency and reduces EMI for greater reliability.
Specifications
