The serial nvSRAM family includes 1-Mbit devices in multiple configurations with an industry-standard SPI interface. Available in small-footprint 8-pin DFN and 16-pin SOIC packages, the serial nvSRAMs feature operating frequencies up to 40 MHz. One member of the serial nvSRAM family integrates an RTC as well.
Cypress’s parallel nvSRAMs feature access times as low as 20 ns, infinite read, write and recall cycles, and up to 20-years of data retention. The new 4-Mbit and 8-Mbit nvSRAMs integrate an RTC that enables time-stamping of critical data for back-up and also features a programmable alarm function and watchdog timer. For more information about Cypress’s portfolio of nvSRAM products, visit www.cypress.com/go/nvm.
“Our new serial family extends Cypress’s industry-leading nvSRAM portfolio to address applications that require high-endurance memories in industry-standard, low-pin count packages,” said Jithender Majjiga, Senior Director of the Non-Volatile Products Business Unit at Cypress. “Likewise, integrating a real-time clock in our nvSRAMs enables our portfolio to cover applications traditionally served by BBSRAMs.”
Cypress’s nvSRAMs are ROHS-compliant and directly replace SRAM, battery-backed SRAM (BBSRAM) and EEPROM devices, offering fast non-volatile data storage without batteries. Data transfers from the SRAM to the device’s non-volatile elements take place automatically at power down. On power up, data is restored to the SRAM from the non-volatile memory. Both operations are also available under software control. nvSRAMs reduce board space and design complexity.
A leader in SONOS process technology, Cypress is using the S8 technology in next generation PSoC® mixed-signal arrays, programmable clocks and other products. SONOS is compatible with standard CMOS technologies and offers numerous advantages including high endurance, low power, and radiation hardness. In addition, SONOS technology provides a more robust, manufacturable and scalable solution compared to other magnetic or ferroelectric based non-volatile memory technologies.