The new Si7625DN will be used for adaptor, load, and battery switches in notebook computers, netbooks, and industrial/general systems. Adaptor switches (switching between the adaptor/wall power and the battery power) are usually on and drawing current. The lower on-resistance of the Si7625DN translates into lower power consumption, saving power and prolonging battery life between charges, while also reducing heat to enable a smaller PCB pad area. For load switches up to 24 V and hot-swap applications in industrial/general systems, the MOSFET’s low on-resistance also results in lower voltage drops.
The Si7625DN offers ultra-low on-resistance of 7 mΩ at 10 V and 11 mΩ at 4.5 V. These values are 30 % lower at 10 V and 39 % lower at 4.5 V than the previously leading 30-V device in the 3.3-mm by 3.3-mm footprint area.
The new MOSFET joins Vishay’s previously released 30-V p-channel TrenchFET Gen III Si7145DP in the PowerPAK SO-8 package. To meet the needs of individual applications, the p-channel TrenchFET Gen III packaging options offer designers a choice between the maximum drain current and power dissipation of the PowerPAK SO-8 (85 % and 79 % higher, respectively, than the SO-8) or the space savings provided by the PowerPAK 1212-8. With a compact 3.3-mm by 3.3-mm footprint, the device offers one-third the footprint area of the PowerPAK SO-8 or SO-8 type packages.
The MOSFET is 100 % Rg- and UIS-tested, compliant to RoHS Directive 2002/95/EC, and halogen-free in accordance with IEC 61249-2-21.
Samples of the new Si7625DN TrenchFET power MOSFET are available now. Production quantities will be available in Q2 2010, with lead times of 16 weeks for larger orders.
