As a space-saving alternative to MOSFETs in the much larger SO-8 package, the new PowerPAK ChipFET devices deliver higher power density by offering the same 3-W maximum power dissipation with an 81% smaller footprint area, and a 48% thinner height profile (0.8 mm).
For optimized design efficiency, n-channel power MOSFETs in Vishay’s new PowerPAK ChipFET family are designed for point-of-load, synchronous rectification, and logic-level dc-to-dc conversion applications in low-power computer and fixed telecomm applications where space is at a premium.
N-channel PowerPAK ChipFET devices will also be used as load switches in portable electronic systems and notebook PCs, delivering footprint savings of 33%, a 23% thinner height profile, and a 9% reduction in on-resistance at a 4.5-V gate drive compared to power MOSFETs in the TSOP-6.
Single n-channel power MOSFETs in the PowerPAK ChipFET family are rated for typical thermal resistance values as low as 3 °C/W (RthJC), with maximum on-resistance values as low as 0.015 Ω in a 20 VDS n-channel single-channel device, and 0.039 Ω in a dual-channel device. All of these new PowerPAK ChipFET devices are pin-compatible with products in the standard ChipFET package.