ON Semiconductor has released new EEPROM (Electrically Erasable Programmable Read-Only Memory) devices for the automotive, medical, and consumer markets.
The EEPROM devices include the high density 512 kilobit (kb) CAT24C512 and 1 megabit (Mb) CAT24M01, which have a 1.8 volt (V) to 5.5 V supply voltage range. The CAT24C512 and CAT24M01 employ 256 byte and 128 byte page write buffers respectively. Both devices support Standard 100 kilohertz (kHz), Fast 400 kHz, and Fast-Plus 1 megahertz (MHz) serial I2C protocols. These devices are manufactured on a 0.18 micrometer (µm) low power CMOS process at the ON Semiconductor owned and operated Gresham, Oregon facility.
In addition, the company introduced a series of AEC-Q100 qualified EEPROMs for automotive designs. These devices have a 2.5 V to 5.5 V supply voltage range and support the Standard and Fast I2C protocols. Both the 64 kb CAV24C64 and the 32 kb CAV24C32 feature 32 byte page write buffers, while the 2 kb CAV24C02, 4 kb CAV24C04, 8 kb CAV24C08 and 16 kb CAV24C16 incorporate a 16 byte page write buffer. These devices are also manufactured at the Gresham facility, on a 0.35 µm process.
All of the new EEPROM devices feature a 100 year data retention period and support for 1,000,000 program/erase cycles. The operating temperature range of these serial EEPROMs is −40 ⁰C to +125 ⁰C.
Further products will be added to the portfolio later this year, including versions of both the high density and automotive devices with SPI interfaces, to complement the I2C interface products.
“The state-of-the-art ON Semiconductor facility in Gresham, Oregon, provides us with advanced, in-house manufacturing technology and substantial capacity to provide a stable supply chain for EEPROM products,” said Dev Nair, marketing director for EEPROM products at ON Semiconductor. “We are pleased to be able to offer high density and automotive qualified I2C EEPROMs to our broad customer base, and look forward to expanding the portfolio further with SPI EEPROMs later this year.”