Infineon Technologies AG

Address:
Am Campeon 1-12
85579 Neubiberg
Bavaria


85579 Neubiberg
Germany

Phone: +49-89-234 28480

Web: www.infineon.com

We make life easier, safer and greener

The world’s swelling population, more and more megacities and the rising demand for energy is prompting us to rethink many aspects of our modern lifestyle.

Semiconductor and system solutions from Infineon contribute to a better future – making our world easier, safer and greener. These tiny, barely visible electronic components have become an indispensable part of our daily lives. They help to feed regenerative energy into power grids with almost zero losses, tame power-hungry computers, safeguard the data flying through cyberspace and make our cars more energy-efficient.


Infineon Technologies AG articles

Displaying 1 - 20 of 235

Investment in voice-controlled human machine interfaces

Investment in voice-controlled human machine interfaces
In just three years from now, we can expect that 30 billion devices will belong to the Internet of Things (IoT). Cars, homes, industrial plants and consumer devices are rapidly becoming connected to the Internet. While today the interaction between humans and machines is mostly done by touch, the next evolutionary step of IoT will lead to the omni-presence of high-performance voice control. Infineon Technologies wants to further develop its capabilities to shape this market segment.
15th September 2017

Power MOSFET designed for low power SMPS market

Power MOSFET designed for low power SMPS market
  Infineon Technologies is expanding its recently launched CoolMOS P7 superjunction power MOSFET family with a SOT-223 package. The device has been developed as a one-to-one drop-in replacement for DPAK.
24th August 2017

Packaged MEMS microphones offer 70dB signal-to-noise ratio

Packaged MEMS microphones offer 70dB signal-to-noise ratio
Addressing the needs for high performance, low noise MEMS microphones, Infineon Technologies is entering the packaged silicon microphone market. The analogue and digital microphones are based on Infineon’s dual backplate MEMS technology and feature a 70dB signal-to-noise ratio (SNR). This is combined with a low distortion level of ten percent at a 135dB sound pressure level (SPL). In a 4x3x1.2mm MEMS package, the microphones are suited for high-quality acoustic recordings and far field voice capturing applications.
28th July 2017


IGBT modules offer increased current rating of 150A

IGBT modules offer increased current rating of 150A
With the introduction of the EconoPIM 3 package, Infineon Technologies has expanded its product portfolio of IGBT modules. The current rating of the module is thereby increased from 100A by 50% to 150A. The new power modules serve the growing demand for higher power density within the same footprint. Typical applications are motor controls for drives in elevators, escalators, fans or pumps.
19th July 2017

Kit simplifies speed measuring sensor designs

Kit simplifies speed measuring sensor designs
Development kits for sensors from Infineon are significantly reducing design effort – and thereby development time and system costs. For reliable and fast measurement of speed, Infineon Technologies has announced the new Hall sensor TLE4922 as well as the 'Speed Sensor 2Go' design kit that goes with it. The TLE4922 was developed for industrial and automotive applications, where fast and reliable measurement of speed is critical, such as speed detection of crankshafts and transmissions in two-wheelers and three-wheelers.
26th June 2017

Infineon awarded "Supplier of the Year" by DENSO

The Japanese automotive system supplier DENSO has honored Infineon with a “Supplier of the Year Award”. DENSO acknowledged the Infineon North America team for their outstanding local support. The award is given to the supplier who demonstrates commitment to exceptional quality and logistics performance. The assessment criteria also include collaboration in advancing automotive technologies and the supplier’s willingness to consistently exceed expectations.
20th June 2017

High power density discrete IGBT in TO-247PLUS package

High power density discrete IGBT in TO-247PLUS package
Infineon Technologies has expanded its 1200 V discrete IGBT product portfolio by offering up to 75 A. The devices are co-packed with a full rated diode in a TO-247PLUS package. The new TO-247PLUS 3pin and 4pin packages serve the growing demand for higher power density and highest efficiency in discrete packages. Typical applications with a blocking voltage of 1200 V requiring high power density are drives, photovoltaic, and UPS. Additional applications comprise battery charging and energy storage systems.
7th June 2017

Infineon demonstrates first post-quantum cryptography on contactless security chip

Infineon demonstrates first post-quantum cryptography on contactless security chip
Due to their computing power, quantum computers have the disruptive potential to break various currently used encryption algorithms. Infineon Technologies is ready to provide a smooth transition from today’s security protocols to next-generation post-quantum cryptography (PQC). The company has now successfully demonstrated the first PQC implementation on a commercially available contactless security chip, as used for electronic ID documents.
5th June 2017

"eRamp" strengthens Germany and Europe in power electronics

"eRamp" strengthens Germany and Europe in power electronics
One of the most important European research projects for energy efficiency, “eRamp”, is coming to a close. Over the past three years, 26 partners from business and science have explored innovative electronics components for using energy even more efficiently. Their focus was on the rapid introduction of new production technologies, such as packaging technologies for energy-saving chips. The eRamp project covered the entire power electronics value chain, from generation and transmission all the way to consumption.
5th June 2017

Full-SiC-module suits PV inverters, UPS & charging systems

Full-SiC-module suits PV inverters, UPS & charging systems
Higher efficiency, increased power density, smaller footprints and reduced system costs: these are the main advantages of transistors based on SiC. Infineon Technologies is starting volume production for the Easy 1B, the first full-SiC module announced during PCIM 2016. At PCIM 2017, the company showcased additional module platforms and topologies for the 1200V CoolSiC MOSFET family. Infineon is now able to bring the potential of SiC technology to a new level.
24th May 2017

IPM combines boost PFC stage & 3 phase inverter

IPM combines boost PFC stage & 3 phase inverter
Infineon has introduced the CIPOS Mini, featuring power factor correction (PFC). The intelligent power module (IPM) combines a single switch boost PFC stage and a 3 phase inverter in one package. With the PFC integrated into the inverter module, the integrated CIPOS Mini IPM helps to reduce system size and the bill of material. Moreover, the additional PCB space gives room for further components.
22nd May 2017

40V MOSFET suits battery powered applications

40V MOSFET suits battery powered applications
Infineon complements its StrongIRFET family with a 40V MOSFET packaged in D²PAK 7pin+. The new MOSFET family offers an extremely low R DS(on) of 0.65mΩ and the highest current carrying capability in the industry. This increases both robustness and reliability for high power density applications which require high efficiency and reliability. The surface mount D²PAK 7pin+ package targets low voltage drives, battery powered tools and small electric vehicles.
20th April 2017

Quasi-resonant flyback controller offers faster startup

Quasi-resonant flyback controller offers faster startup
The 5th gen of Infineon Technologies' stand alone quasi-resonant flyback controller and integrated power IC CoolSET family has been introduced. The latest development in this family of devices offers improved efficiency, faster startup, and better overall performance under varying load conditions. The new ICs are especially designed for AC/DC switch mode power supplies in a great variety of applications such as aux power for home appliances, server, and industrial SMPS.
12th April 2017

Efficient MOSFETs operate at 600V breakdown voltage

Efficient MOSFETs operate at 600V breakdown voltage
Infineon Technologies has extended its existing portfolio of CoolMOS technologies with the 600 V CoolMOS P7 and 600 V CoolMOS C7 Gold (G7) series. The product families are designed to operate at 600V breakdown voltage and deliver improved superjunction MOSFET performance. They achieve unmatched power density in their respective target applications.
6th April 2017

MOSFETs’ small package increases density and saves space

MOSFETs’ small package increases density and saves space
There are three voltage classes in the new logic level IR MOSFET family. They are offered in a PQFN package, designed to deliver high power density and improve efficiency, says Infineon Technologies.
6th April 2017

Development kits cut EtherCAT design time

Development kits cut EtherCAT design time
Infineon Technologies says that it is making the cost-efficient implementation of EtherCAT applications gets even easier – with it’s future- proof and application-optimised ARM-based microcontrollers. The company has released new development kits that help cutting down EtherCAT development time to three months: the XMC4300 Relax EtherCAT Kit and the XMC4800 EtherCAT Automation Kit. Both kits passed the EtherCAT certification test and are available.
20th March 2017

Modules in 62 mm package enable higher power density

Modules in 62 mm package enable higher power density
Infineon Technologies has expanded its offering of 62 mm IGBT modules. The new power modules serve the growing demand for higher power density without increasing package size. This is realised by a larger chip area and an adapted DCB substrate in the proven 62 mm package. Typical applications for modules with 1200 V blocking voltage are drives, solar inverters and uninterruptible power supply (UPS) as well as medium voltage drives for modules with 1700 V blocking voltage.
13th March 2017

MEMS microphones provide unmatched voice-recognition

MEMS microphones provide unmatched voice-recognition
Infineon Technologies and XMOS partner to deliver a new building block for voice recognition. It features a combination of radar and silicon microphone sensors from Infineon and audio processor from XMOS. The devices provide far field voice capture by audio beamforming combined with radar target presence detection. Together, they guarantee for optimal sound recognition and flawless execution for digital voice assistance across a broad range of voice-controlled devices.
1st March 2017

MOSFET regulator reduces component count

MOSFET regulator reduces component count
An easy-to-use, fully integrated and highly efficient DC/DC regulator has been introduced by Infineon Technologies. The IR3883 aims at high density Point of Load applications where high efficiency, high reliability and good thermal behaviour are required. The device is suitable for NetCom, telecom, servers and storage solutions.
28th February 2017

Tech basis set for high performance electronic circuit breakers

Tech basis set for high performance electronic circuit breakers
A German research team has explored the technological basis for reducing the energy losses in power grids and electric devices by more than half. This can be made possible through the use of DC. DC allows for smaller power losses when compared to the alternating current (AC) used today. The five project partners from industry and science investigated the foundations of a semiconductor-based and completely electronic circuit breaker that can be used for future DC power grids and applications.
13th February 2017


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