Efficient Power Conversion has advanced the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. This device is suited for applications with demanding requirements for performance in space-constrained form factors including USB-C batter chargers and ultra-thin point-of-load (POL) converters.

To support the continued adoption of gallium nitride (GaN) FETs and Integrated Circuits in the European market, Efficient Power Conversion Corporation (EPC) has announced the appointment of Stefan Werkstetter as Director, Sales EMEA.

EPC has announced the availability of the eGaN FETs EPC9148 and EPC9153 demonstration boards for 48V DC/DC conversion. The EPC9153 is a 250W, extremely thin, power module using a simple, low-cost synchronous buck configuration delivering a 98.2% peak efficiency with a maximum component height of 6.5mm. 

Efficient Power Conversion has advanced the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204 100 V eGaN FETs. The applications for these devices include synchronous rectification, class-D audio, infotainment systems, DC/DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones.

  The EPC2215 and EPC2207 are the latest generation of 200V eGaN FETs from Efficient Power Conversion (EPC). Both double the performance of the earlier generation of 200V eGaN FETs while being half the size to save valuable real estate on some of the most demanding and space-sensitive applications.

  A demonstration board combines Microchip’s DSCs and EPC’s eGaN FETs to raise power density and efficiency in DC conversion. The brick DC/DC converter targets data centres, telecomms and automotive applications.

  A high power 1/16th brick converter using GaN FETs could increase maximum load current in 1/16th brick converter designs, compared with MOSFET designs

The team from Efficient Power Conversion (EPC) will be delivering three technical presentations and participating in two panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2020 Digital Days, (July 7 – 8).

Efficient Power Conversion (EPC) and VPT have announced the establishment of EPC Space, a joint venture focused on designing and manufacturing radiation hardened (Rad Hard) GaN-on-silicon transistors and ICs packaged, tested, and qualified for satellite and high-reliability applications.

Efficient Power Conversion (EPC) Corporation has posted an update to its popular ‘How to GaN’ video podcast series. These updated videos are based on the recently published third edition textbook, ‘GaN Transistors for Efficient Power Conversion’.

The EPC2152 is a monolithic 80V, 12.5A power stage IC for 48V DC/DC conversion in high-density computing, motor drives for e-mobility and Class D audio applications.

  Time of flight (ToF) relies on fast and accurate object detection. In automotive design, it is used in lidar systems for safety systems in advanced driver assisted systems (ADAS).

  It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow, Efficient Power Conversion

EPC has been achieved successful AEC Q101 qualification of its 15V EPC2216 eGaN FET. It is designed for lidar applications where increased accuracy is vital such as in self-driving cars and other time-of-flight (TOF) applications including facial recognition, warehouse automation, drones and mapping.

Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of ‘GaN Transistors for Efficient Power Conversion’, a textbook written by power conversion industry experts and published by John Wiley and Sons. It is designed to provide power system design engineering students, as well as practising engineers, basic technical and application-focused information on how to design more efficient power conversio...

  GaN is making possible what was once thought to be impossible in many industries. Alex Lidow, EPC, explains how GaN technology is contributing to significant improvements in medicine  

  The EPC2206, and EPC2212 eGaN FETs by Efficient Power Conversion (EPC) are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 and 100V DS ratings respectively. They have received AEC Q101-qualification and will be joined by more discrete transistors and ICs designed for the harsh automotive environment, says the company.

  Two eGaN discrete transistors are qualified to AEC Q101 for automotive applications, announces Efficient Power Conversion (EPC). The company believes the certification brings its eGaN technology to vehicle design.

  Efficient Power Conversion (EPC) claims that its 350V eGaN power transistor is 20 times smaller than the comparable silicon. This makes it suitable for use in multi-level converters, for EV charging, solar power inverters and motor drives. 

  A five-phase development board by Efficient Power Conversion (EPC) demonstrates the reduction in size and the enhanced efficiency for power conversion that can be achieved using high frequency switching eGaN power transistors, says the company.