Apacer SSDWidget, is a real-time monitoring and diagnosis software tool to satisfy mobile needs in the cloud-computing era. It is designed for SSD current mainstream SATA 6.0 Gbps interfaces. Managers may connect several SSDs within the enterprise together, conduct instant monitoring via web browser or mobile App, and integrate attributes like erase times, unpredicted power failure times, SATA signal failure times, ECC failure times and data written in the system into cloud monitoring content.
Toshiba Electronics Europe is launching the world’s fastest microSD memory cards that are compliant with the ultra high speed serial bus interface UHS-II , as defined in SD Memory Card Standard Ver. 4.20. The new microSD memory cards will be available in 32GB and 64GB and achieve the fastest transfer rates of any microSD card.
A 4Kb I2C Serial Presence Detect (SPD) EEPROM, designated the 34AA04, has been introduced by Microchip Technology. The device is specifically designed to work with the next generation of Double Data Rate 4 (DDR4) SDRAM modules used in high-speed PCs and laptops, while also supporting older DDR2/3 platforms.
The S8 SD/MMC flash memory controller, launched by Hyperstone, is suited for applications such as SDHC, SDXC, SD (SecureDigital), smartSD, smart microSD, high speed and UHS-I memory cards as well as e•MMC MCP modules.
Expanding the company's portfolio of high-speed CMOS synchronous DRAMs (SDRAMs), Alliance Memory has introduced the 2m x 32 AS4C2M32S-6TIN, AS4C2M32S-6BIN and AS4C2M32S-7BCN; 4m x 32 AS4C4M32S-6TIN, AS4C4M32S-6BIN and AS4C4M32S-7BCN; and 8m x 32 AS4C8M32S-7BCN x32 devices in the 90-ball 8x13x1.2mm TFBGA, and 86-pin 400-mil plastic TSOP II packages.
Fujitsu Semiconductor release the MB85RC1MT, a 1Mb FRAM product with I2C interface. This represents the highest memory capacity of the company's line-up for the I2C serial interface and is offered in an industry-standard SOP-8 package that is pin-compatible with EEPROM and Flash memory.
CEA-Leti has fabricated ultra-scaled split-gate memories with gate length of 16nm and demonstrated their functionality, showing good writing and erasing performances with memory windows over 6V. The devices provide several benefits especially for contactless memory applications, such as enlargement of the memory window and increased functionality. Also because of an optimised fabrication step, the devices allow better control of spacer memory gate shape and length.
A line of high-speed CMOS DDR2 SDRAMs has been announced by Alliance Memory. The devices feature densities of 512Mb (AS4C32M16D2) and 1Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball 8 x 10 x 1.2-mm and 84-ball 8 x 12.5-x 1.2-mm FBGA packages.
A range of SLC NAND flash memory has been expanded upon with the introduction of embedded 8-bit ECC. The range of 24nm BENAND SLC NAND flash memory, from Toshiba Electronics Europe, enables manufacturers to utilise the latest 24nm technology in devices that were designed to use 4xnm NAND. This results in extended product life for devices such as consumer electronics, multimedia devices, smart meters, intelligent lighting systems and industrial technology.
A line of high-speed CMOS DDR SDRAMs with densities of 64Mb, 128Mb, 256Mb and 512Mb has been announced by Alliance Memory. The 64Mb (AS4C4M16D1-5TIN), 128Mb (AS4C8M16D1-5TIN), 256Mb (AS4C16M16D1-5TIN), and 512Mb (AS4C32M16D1-5TIN) devices havew an industrial temperature range of -40°C to +85°C.