Memory

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Micron introduces 16-Nanometer Flash Memory Technology

Micron introduces 16-Nanometer Flash Memory Technology
Micron Technology is sampling next-generation, 16-nanometer process technology, enabling the industry's smallest 128-gigabit multi-level cell NAND Flash memory devices. The 16nm node is not only the leading Flash process, but it is also the most advanced processing node for any sampling semiconductor device. It solidifies Micron's leadership position in storage technology development and delivers on the company's vision to provide the most advanced semiconductor solutions.
17th July 2013

Rochester Electronics' Product Re-Introduction through their Extension-of-Life® Program

Rochester Electronics' Product Re-Introduction through their Extension-of-Life® Program
Rochester Electronics is officially licensed by AMD to continue manufacturing the AM27C512 product family through Rochester’s’ extensive line-up of Extension-of-Life® solutions, which supports customer requirements following the end-of-life (EOL) notification.
8th July 2013

Serving On Demand

Serving On Demand
As we demand more mobility and instant access, we need bigger, faster, and more efficient data centers to serve up the content. Can non-volatile memory successfully extend its position as the technology of choice in mobile devices, to high performance computing? Find out as we explore more in this article from ES Design magazine.
24th June 2013


Corsair Launches Vengeance Pro Series DDR3 Memory

Corsair today announced the Corsair Vengeance Pro Series of high-performance DDR3 computer memory for PC overclockers, enthusiasts, and system builders. Available initially in capacities up to 64GB and speeds up to 2933MHz, the Vengeance Pro Series memory modules are designed to set new levels of value and overclocking performance with the 4th generation Intel Core processor family and previous generation Intel and AMD platforms.
18th June 2013

Toshiba Develops World’s First Multi-level-cell Structure MROM cell

Toshiba Corporation today announced that the development of the world's first MROM cell to offer improved cell current characteristics without any increase in cell size. This advance was achieved by adopting a multi-level-cell structure, which also secures high speed operation.
17th June 2013

SK Hynix Developed the World’s First High Density 8Gb LPDDR3

SK Hynix Developed the World’s First High Density 8Gb LPDDR3
SK Hynix announced that it has developed the world’s first 8Gb LPDDR3 using its advanced 20nm class process technology. This product is a top-performance mobile memory solution which features high density, ultrahigh speed and low power consumption.
14th June 2013

New Product Introduction From Rochester Electronics' Extension-of-Life Program

New Product Introduction From Rochester Electronics' Extension-of-Life Program
Rochester Electronics has re-introduced and continues to manufacture the X28HC256DM-12 low power CMOS EEPROM, originally manufactured by Intersil. It supports a 128-byte page write operation, providing a 24 micro-second/byte write cycle, and enabling the entire memory to be rewritten in less than 0.8 seconds. For a continuous authorized source on this product series, check inventory here.
14th June 2013

Adesto Technologies Introduces DataFlash E-Series Serial Flash Memory

Adesto Technologies today announced the launch of the DataFlash “E”-series, a new family of non-volatile memory devices with lower power requirements and smart features for higher system efficiency and lower system costs. At introduction, the family includes 2 Mb, 4 Mb, 16 Mb and 32 Mbit memory devices, with 8 Mb and 64 Mb devices in development.
13th June 2013

ADATA DRAM Takes a Leap Forward

ADATA DRAM Takes a Leap Forward
ADATA Technology today launched a successor to the company’s popular XPG DRAM lineup. The new XPG V2 series are designed for 3rd Generation Intel Core Processors and the Z87 platform, and feature colorful and visually striking heat spreaders. The XPG V2 modules all feature 2oz copper, 8 layer PCB aluminum heat spreaders employing Thermal Conductive Technology.
12th June 2013

Alliance Memory Launches Two New 16M Fast (10 ns) CMOS SRAMs

Alliance Memory Launches Two New 16M Fast (10 ns) CMOS SRAMs
Alliance Memory today expands its line of legacy high-speed CMOS SRAMs with two new 16M ICs. Featuring fast access times of 10 ns, the AS7C316096A (2048K x 8) and AS7C316098A (1024K x 16) are both offered in the 48-pin, 12-mm by 20-mm TSOP-1 package.
12th June 2013


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