Memory

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DDR4 DRAM modules target the IoT

DDR4 DRAM modules target the IoT
Suitable for server, consumer workstation and gaming PC applications, the DDR4 DRAM modules from ADATA support Intel Haswell-EP series processors. The company have designed the modules in such a way as to provide high performance, scalability, power efficiency and reliability.
11th September 2014

DDR4 memory features a work clock rate of 2133Mbps

DDR4 memory features a work clock rate of 2133Mbps
DDR4 memory is replacing DDR3 and being built-in to the motherboard of more and more commercial products including personal computers, servers, smartphones and tablet PCs. To adapt to the changing market trend, Apacer has released the DDR4 2133 4GB/8GB unbuffered DIMM. 
2nd September 2014

SDIMM integrates SSD and DRAM

SDIMM integrates SSD and DRAM
To meet the demand for compact memory modules, Apacer has released the Combo SDIMM. The module integrates SSD and DRAM, taking up less motherboard space. With the M.2 NGFF and CFast memory cards users can expand SSD storage capacity at anytime. By adopting standard DDR3 interface and standard 240-pin design, the memory module is ready-to-use once external SATA signal cable is connected. 
20th August 2014


AMD’s AM27C010 CMOS EPROM re-introduced by Rochester

AMD’s AM27C010 CMOS EPROM re-introduced by Rochester
The high speed (45ns), low power AM27C010 1-Megabit CMOS EPROM (erasable programmable read only memory) is organised as 128,000 words by 8-bits per word. Operating from a single +5V supply, the AM27C010 has a static standby mode and features fast single address location programming.
20th August 2014

Industry's first monolithic 8Gb DDR3 SDRAM

Based on the company's latest-generation 25nm DRAM manufacturing process, Micron Technology has introduced what is claimed to be the industry's first monolithic 8Gb DDR3 SDRAM component. The device will enable cost-effective, high-capacity solutions optimised to support large-scale, data-intensive workloads in enterprise applications such as data analytics.
20th August 2014

3D vertical NAND flash memory powers SSD

3D vertical NAND flash memory powers SSD
Based on the company's 3D vertical NAND (V-NAND) flash memory technology, Samsung has introduced the 850 PRO SSD (Solid State Drive). Suitable for use in high-end PCs and workstations, the SSDs deliver sequential read performance up to 550MBps, write performance of up to 520MBps, random read performance up to 100,000IOPS and random write speeds up to 90,000IOPS.
15th August 2014

On-chip ECC improves reliability for Asynchronous SRAMs

Simplifying designs and reducing board space, Cypress Semiconductor has introduced a 16Mb Fast Asynchronous SRAM with ECC (Error-Correcting Code). Without the need for additional error correction chips, the on-chip ECC feature allows the SRAMs to provide high levels of data reliability.
15th August 2014

Fast async SRAM operates at 8ns access time

A 4 Mbit, static RAM device engineered using Cypress Semiconductor’s high-performance CMOS technology is organised as 524,288 words by 8 bits and provides a high-speed, maximum access time of 8 ns and offers easy memory expansion with CE and OE features. The CY7C1049CV33 Fast Async SRAM is now in stock at Mouser Electronics. Available in a 44-pin TSOP II package, this RoHS-compliant device is an ideal choice for memory in a wide variety of applications.
12th August 2014

16Mb parallel nvSRAM offers 25ns access times

16Mb parallel nvSRAM offers 25ns access times
Extending the company's nonvolatile Static Random Access Memory (nvSRAM) portfolio, Cypress Semiconductor has announced the 16Mb nvSRAM family. These devices target mission-critical applications including high-end PLCs, high-speed data/error loggers in storage equipment, networking equipment, avionics systems and electronic gaming machines.
12th August 2014

1.2V DDR4 DRAM module provides stable operation

1.2V DDR4 DRAM module provides stable operation
Offering improved performance and lower power consumption, a DDR4 overclocking memory has been released by ADATA. The XPG Z1 DDR4 DRAM module, which is part of the company's XPG series, supports the Intel Haswell-E platform. With an operating voltage of 1.2V, the module is kept at a low temperature, providing stable operation. Efficient data transfer is also enabled by the system's 2800MHz speed, 17-17-17 CL timings and 22GB/s transfer bandwidth.
8th August 2014


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