Memory

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Memory device boasts flexible read/write options

Memory device boasts flexible read/write options
A parallel Flash memory device, the SST38VF6401B, has been launched by Microchip. Manufactured with the company's MOS SuperFlash technology, the SST38VF6401B is a 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) device which conforms to JEDEC standard pin assignments for x16 memories.
6th May 2014

SRAM design offers power promise

SureCore says that early testing of its innovative low power SRAM design confirms its simulations that deliver in excess of 50% power savings over other SRAM technologies. The tests prove that the patented circuit architecture developed by SureCore delivers greater than 50% power savings versus industry standard SRAMs. SureCore’s energy-efficient memory was designed through a unique combination of detailed circuit analysis, architectural improvements, and the use of advanced statistical models.
28th April 2014

Embedded NAND flash memory module is UFS Ver. 2.0 compliant

Embedded NAND flash memory module is UFS Ver. 2.0 compliant
Toshiba has claimed that it is the first in the industry to provide 32 and 64GB embedded NAND flash memory modules that are compliant with the JEDEC UFS (Universal Flash Storage) Ver. 2.0 standard. It supports maximum transfer rates up to 11.6Gb/s by integrating two 5.8Gb/s High-speed MIPI M-PHY HS-G3 I/F data lanes - an optional feature of UFS Ver. 2.0.
28th April 2014


Software tool addresses mobile needs in cloud computing

Apacer SSDWidget, is a real-time monitoring and diagnosis software tool to satisfy mobile needs in the cloud-computing era. It is designed for SSD current mainstream SATA 6.0 Gbps interfaces. Managers may connect several SSDs within the enterprise together, conduct instant monitoring via web browser or mobile App, and integrate attributes like erase times, unpredicted power failure times, SATA signal failure times, ECC failure times and data written in the system into cloud monitoring content.
24th April 2014

Pacy memory cards clock in at 30MB/s

Pacy memory cards clock in at 30MB/s
Toshiba Electronics Europe is launching the world’s fastest microSD memory cards that are compliant with the ultra high speed serial bus interface UHS-II , as defined in SD Memory Card Standard Ver. 4.20. The new microSD memory cards will be available in 32GB and 64GB and achieve the fastest transfer rates of any microSD card.
17th April 2014

4Kb SPD EEPROM is suited for DDR4 SDRAM modules

4Kb SPD EEPROM is suited for DDR4 SDRAM modules
A 4Kb I2C Serial Presence Detect (SPD) EEPROM, designated the 34AA04, has been introduced by Microchip Technology. The device is specifically designed to work with the next generation of Double Data Rate 4 (DDR4) SDRAM modules used in high-speed PCs and laptops, while also supporting older DDR2/3 platforms.
14th April 2014

Flash memory card controller for industrial applications

Flash memory card controller for industrial applications
  The S8 SD/MMC flash memory controller, launched by Hyperstone, is suited for applications such as SDHC, SDXC, SD (SecureDigital), smartSD, smart microSD, high speed and UHS-I memory cards as well as e•MMC MCP modules.
11th April 2014

32-bit high-speed CMOS SDRAMs with 5.4ns access time

32-bit high-speed CMOS SDRAMs with 5.4ns access time
Expanding the company's portfolio of high-speed CMOS synchronous DRAMs (SDRAMs), Alliance Memory has introduced the 2m x 32 AS4C2M32S-6TIN, AS4C2M32S-6BIN and AS4C2M32S-7BCN; 4m x 32 AS4C4M32S-6TIN, AS4C4M32S-6BIN and AS4C4M32S-7BCN; and 8m x 32 AS4C8M32S-7BCN x32 devices in the 90-ball 8x13x1.2mm TFBGA, and 86-pin 400-mil plastic TSOP II packages.
27th March 2014

1Mb FRAM is pin-compatible with EEPROM and Flash memory

1Mb FRAM is pin-compatible with EEPROM and Flash memory
Fujitsu Semiconductor release the MB85RC1MT, a 1Mb FRAM product with I2C interface. This represents the highest memory capacity of the company's line-up for the I2C serial interface and is offered in an industry-standard SOP-8 package that is pin-compatible with EEPROM and Flash memory.
18th March 2014

Split-gate memory Cell boasts 16nm gate length

CEA-Leti has fabricated ultra-scaled split-gate memories with gate length of 16nm and demonstrated their functionality, showing good writing and erasing performances with memory windows over 6V. The devices provide several benefits especially for contactless memory applications, such as enlargement of the memory window and increased functionality. Also because of an optimised fabrication step, the devices allow better control of spacer memory gate shape and length.
11th March 2014


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