Memory

Displaying 31 - 40 of 506

6.0 Gbit/s SATA SSD suits value-endurance workloads

6.0 Gbit/s SATA SSD suits value-endurance workloads
Toshiba Electronics Europe (TEE) announces the HK4, a new enterprise 6.0 Gbit/s SATA SSD series designed for read-intensive and value-endurance workloads. The HK4 Series is Toshiba’s first SSD for enterprise and data centre applications to embed 15nm MLC NAND flash memory and offers low latency tuned for high Quality of Service (QoS).
23rd February 2016

Quad SPI FRAM device features 4Mb capacity

Quad SPI FRAM device features 4Mb capacity
Fujitsu is launching the 'industry’s first' Quad SPI FRAM product MB85RQ4ML, offering an ultra high speed and compact nonvolatile memory solution for networking, industry computing and HMI applications. MB85RQ4ML incorporates 4Mbit FRAM (Ferroelectric Random Access Memory) and Quad SPI interface.
23rd February 2016

High capacity SSD embeds TLC NAND Flash memory

High capacity SSD embeds TLC NAND Flash memory
  Toshiba Electronics Europe has introduced a client Solid State Drive (cSSD) with embedded TLC NAND flash memory. The SG5 series provides high performance and large storage capacities while maintaining a small form factor and reducing costs for consumers.
17th February 2016


USB 3.1 Flash memory controller enhances endurance

Hyperstone introduces its USB 3.1 Flash memory controller, U9. U9 is targeting industrial applications such as removable USB Flash drives (UFD) and embedded USB Flash modules (eUSB). Together with Hyperstone's hyMap Flash Translation Layer (FTL) and hyReliabilityT firmware features, U9 provides enhanced endurance and data retention management, as well as rigorous power fail-safe features.
15th February 2016

Add flash memory to automotive analogue devices

Renesas Electronics has announced the development of 90nm one-transistor MONOS (Metal-Oxide-Nitride-Oxide-Silicon) flash memory technology that can be used in combination with a variety of processes, such as CMOS and bipolar CMOS DMOS (BiCDMOS), and provides high Programme/Erase (P/E) endurance and low rewrite energy consumption.
3rd February 2016

New neural network based on polymeric memristors

New neural network based on polymeric memristors
Scientists from the Kurchatov Institute, MIPT, the University of Parma, Moscow State University, and Saint Petersburg State University have created a neural network based on polymeric memristors. According to the researchers, these developments will primarily help in creating systems for machine vision, hearing, and other sensory organs, and also intelligent control systems for various devices, including autonomous robots.
1st February 2016

SD and Micro SD memory cards meet demanding applications

SD and Micro SD memory cards meet demanding applications
Thanks to the Swissbit firmware translation layer architecture (FTL) – claimed to be the world’s first implementation of a sub-page based firmware on SD cards – the new S-45 family offers several key features that cannot normally co-exist in one SD/Micro SD card: cost competitiveness, extended endurance, increased retention time, elimination of read disturb and high sustained random write performance for small data size operations as well as power fail safety.
27th January 2016

Achieving power savings of over 50%

The 28nm Fully-Depleted Silicon-on-Insulator (FDSOI) memory compiler has been launched by sureCore, and supports the company's low power, Single Port SRAM IP and Dual Port SRAM IP for 28nm FDSOI process technology. It also offers capacities up to 1MB with word lengths up to 288bits and supports 4, 8 and 16Mux factors.
21st January 2016

1 Tbyte SSD drops in to replace mechanical HDDs

1 Tbyte SSD drops in to replace mechanical HDDs
The SanDisk X400 SSD which is SanDisk’s upper-tier SATA client SSD, driving mainstream adoption in computing platforms is being shipped by MSC Technologies. It is designed with SanDisk’s nCache 2.0 Technology provides greater reliability and high-grade endurance for longevity.
19th January 2016

'The first' 4-ball WLCSP EEPROM with multiple I2C addresses

'The first' 4-ball WLCSP EEPROM with multiple I2C addresses
Extending its M24 serial EEPROM family, STMicroelectronics has announced four devices that are fully compatible with the industry-standard 4-ball Wafer Level Chip Scale Package (WLCSP) footprint. The additions enable, for the first time, two or more 4-pin EEPROMs to be connected to the same I2C bus with an individual I2C address hard-wired internally. This allows dedicated devices for specific purposes, such as front/rear camera modules, on the same bus.
14th January 2016


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