Memory

Displaying 31 - 390 of 360

Split-gate memory Cell boasts 16nm gate length

CEA-Leti has fabricated ultra-scaled split-gate memories with gate length of 16nm and demonstrated their functionality, showing good writing and erasing performances with memory windows over 6V. The devices provide several benefits especially for contactless memory applications, such as enlargement of the memory window and increased functionality. Also because of an optimised fabrication step, the devices allow better control of spacer memory gate shape and length.
11th March 2014

CMOS DDR2 SDRAMs available in 512Mb & 1Gb densities

CMOS DDR2 SDRAMs available in 512Mb & 1Gb densities
A line of high-speed CMOS DDR2 SDRAMs has been announced by Alliance Memory. The devices feature densities of 512Mb (AS4C32M16D2) and 1Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball 8 x 10 x 1.2-mm and 84-ball 8 x 12.5-x 1.2-mm FBGA packages.
10th March 2014

Memory device range expanded with embedded 8-bit ECC

Memory device range expanded with embedded 8-bit ECC
A range of SLC NAND flash memory has been expanded upon with the introduction of embedded 8-bit ECC. The range of  24nm BENAND SLC NAND flash memory, from Toshiba Electronics Europe, enables manufacturers to utilise the latest 24nm technology in devices that were designed to use 4xnm NAND. This results in extended product life for devices such as consumer electronics, multimedia devices, smart meters, intelligent lighting systems and industrial technology.
26th February 2014


High-speed DDR SDRAMs operate from -40°C to +85°C

High-speed DDR SDRAMs operate from -40°C to +85°C
A line of high-speed CMOS DDR SDRAMs with densities of 64Mb, 128Mb, 256Mb and 512Mb has been announced by Alliance Memory. The 64Mb (AS4C4M16D1-5TIN), 128Mb (AS4C8M16D1-5TIN), 256Mb (AS4C16M16D1-5TIN), and 512Mb (AS4C32M16D1-5TIN) devices havew an industrial temperature range of -40°C to +85°C.
26th February 2014

Enterprise HDDs available in capacities up to 5TB

Enterprise HDDs available in capacities up to 5TB
Designed for nearline business-critical workloads, the MG04 series 7,200 RPM HDDs have been released by Toshiba. Available in capacities up to 5TB (terabyte), Toshiba have claimed that these HDDs are the industry’s first enterprise capacity drives to feature Persistent Write Cache technology. This enables improved application performance and data-loss protection in the event of unexpected power loss.
14th February 2014

IP Core exchanges data between EEPROM and CPU’s RAM

IP Core exchanges data between EEPROM and CPU’s RAM
Targeted specifically for DRAM designs, Digital Core Design has introduced the DEEPROM IP Core. Suitable for applications requiring data storage in external non-volatile memories, the DEEPROM performs communication and exchanges data between external serial EEPROM Memory and CPU’s RAM memory interface.
5th February 2014

8Gb LPDDR4 mobile DRAM for the premium mobile market

8Gb LPDDR4 mobile DRAM for the premium mobile market
Samsung has introduced what the company believes to be the first eight Gb low power double data rate 4 (LPDDR4) mobile DRAM. Offering the highest level of density, performance and energy efficiency for mobile memory applications, the high-speed mobile DRAM enables end users to have faster, more responsive applications, more advanced features, and higher resolution displays while maximizing battery life.
6th January 2014

The balance of power

The balance of power
Implementing innovative memory solutions may help add stability to the power/performance balancing act developers must not endure when selecting a new MCU. Philip Ling, ES Design magazine Editor, explores the issues further in this article.
11th December 2013

Q&A explores new Swissbit's “Security” unit

Q&A explores new Swissbit's “Security” unit
Swissbit is stepping into the security market with its new business unit “Security”. Hubertus Grobbel, head of the new division, explains the background and reasons behind the move, as well as its goals.
6th December 2013

CMOS DDR SDRAMs for high-performance PC applications

CMOS DDR SDRAMs for high-performance PC applications
Extending its 64M and 128M lines of high-speed CMOS synchronous DRAMs, Alliance Memory has today introduced a new 2M x 32 device in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA package and a 4M x 32 device in the 86-pin 400-mil plastic TSOP II package. The AS4C2M32S-7TCN and AS4C4M32S-7TCN provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom, and consumer products requiring high memory bandwidth.
5th November 2013


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