Memory

Displaying 31 - 461 of 431

World's first 48-layer 3D stacked cell flash memory

World's first 48-layer 3D stacked cell flash memory
Toshiba has announced the development of the world’s first 48-layer 3D stacked cell structure flash memory, called BiCS, a 2-bit-per-cell 128Gb (16GB) device. The BiCS is based on a leading-edge 48-layer stacking process, which enhances the reliability of write / erase endurance and boosts write speed, and is suited for use in diverse applications, primarily SSD.
26th March 2015

NAND Flash memory supports 'command queueing'

NAND Flash memory supports 'command queueing'
Compliant with JEDEC e•MMC Version 5.1 (released in February 2015), Toshiba Electronics Europe has announced embedded NAND flash memory products supporting 'command queueing' and 'secure write protection' features. The devices are designed for use in a wide range of digital consumer products, including smartphones, tablets and wearable devices.
24th March 2015

Secure SSD can perform encryption key erase in under 30ms

Secure SSD can perform encryption key erase in under 30ms
With data security threats increasing, Microsemi has introduced its 2nd gen highly secure 64GB SSD, specifically designed for market applications where data protection is of the utmost importance. It overcomes malicious attack concerns with Microsemi’s factory firmware lockdown technology preventing covert firmware repurposing. Offered in a 32x28mm BGA package, the SSD is optimised for embedded computers in harsh environments.
18th March 2015


The art of DRAM module testing

The art of DRAM module testing
DRAM technology is well known and components are fully standardised products, which are manufactured with low cost materials and assembly lines. So why are there differences in quality and price anyway? By Ulrich Brandt, Head of Business Unit DRAM Products at Swissbit AG.
18th March 2015

Flash memories target wearables, low power applications

Flash memories target wearables, low power applications
The new ultra-low power MX25R family of Serial NOR Flash devices from Macronix are on sale at distributor Ineltek UK. Targeting wearables and long battery-life applications, the devices offer standard features designers have come to expect in Serial Flash, with many added benefits including deep standby currents measured in nanoamps.
18th March 2015

MRAM device offers SRAM-compatible 35ns read/write timing

MRAM device offers SRAM-compatible 35ns read/write timing
Offering a significantly decreased package footprint size, e2v has announced the release of a stacked-package 32Mb MRAM-based product, the highest density MRAM device in the industry. The EV5A16B is a stacked solution, featuring two 16Mb MRAM devices from Everspin Technologies, and is offered in a 54-pin stacked-package TSOP.
11th March 2015

SQI interfaces provide the 'industry's fastest' erase times

SQI interfaces provide the 'industry's fastest' erase times
  A family of SQI (Serial Quad I/O) interface SuperFlash memory devices has been introduced by Microchip. The SST26VF family is comprised of a 16Mb model, a 32Mb model and a 64Mb model, all of which have been manufactured using Microchip’s CMOS SuperFlash technology.
11th March 2015

Memory card focuses on dashboard cameras,home video

As a finale to the Mobile World Congress in Barcelona, SanDisk introduced the company’s first high endurance microSDXC memory card built to withstand up to 10,000 hours of Full HD Video1 recording.  The new technology has proven itself to enable the company to reach a new milestone -- a 64GB2 microSDXC card that allows consumers to write and rewrite up to 10,000 hours of Full HD recording.
8th March 2015

Unified theoretical description of the behaviour of skyrmions is released

Magnetic vortex structures, so-called skyrmions, could in future store and process information very efficiently. They could also be the basis for high-frequency components. For the first time, a team of physicists succeeded in characterising the electromagnetic properties of insulating, semiconducting and conducting skyrmion-materials and developed a unified theoretical description of their behaviour, thus laying the foundation for future electronic components with purpose-designed properties.
5th March 2015

High-speed multiplexer targets DDR4 NVDIMM technology

High-speed multiplexer targets DDR4 NVDIMM technology
Integrated Device Technology has announced a high-speed multiplexer targeting the nascent NVDIMM (non-volatile dual in-line memory module) ecosystem. The 12-bit bus switch/multiplexer features a make-before-break circuit that prevents glitches when switching and AC and DC parameters optimised for DDR4, enabling the highest possible memory channel performance for NVDIMMs even when intermixed with other DIMM types.
25th February 2015


Memory documents


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