ugh technological advances, Fairchild’s half-bridge solution – the Ultra FRFET family– optimizes designs by providing best-in-class reverse recovery time (trr) of 35ns~65ns and the industry’s smallest reverse recovery current (1.8 ~ 3.1A). Present LCD TV designs use MOSFETs with two fast recovery diodes (FRDs) and two blocking diodes in a half-bridge circuit to initiate the non-zero voltage switching. The FRDs are used to reduce the reverse recovery current. The blocking diodes prevent the built-in diode of the MOSFET from turning on and eliminate the large reverse recovery current of the diodes. Fairchild’s breakthrough solution eliminates the need for two blocking diodes and two FRDs in the half-bridge circuit, saving board space and as much as $.20 per design.
Additionally, when compared to alternate solutions offering a typical gate charge of only 16nC, the Ultra FRFET products are instrumental in reducing the turn-on and turn-off losses of the MOSFET through its significantly lower gate charge (Qg(typ) = 11nC). Fairchild’s Ultra FRFET products also feature a robust dv/dt immunity of 20V/ns, ensuring reliability and strong EMI performance to protect the LCD TVs from interference.
These devices are part of a comprehensive portfolio of MOSFETs that offer designers a wide range of breakdown voltages (-500V to 1000V), state-of-the-art packaging and industry-leading FOM to deliver efficient power management anywhere electronic power conversion is needed.