SynQor expands its Industrial InQor Portfolio

The devices offer exceptionally high power densities of up to 164W/in3, and class leading efficiencies of up to 95%. They offer the system designer valuable board area reductions of up to 42% over competitive Full Brick solutions and the efficiency improvements over those devices are more than 7%, leading to a 60% reduction in power dissipation. This enables the designer to dramatically reduce the heat generated in the system and associated cooling mechanisms, as well as substantially improving overall system reliability.

Calculated MTBF figures according to MIL-HDBK 217F are 1.8Mhrs. All devices are capable of withstanding transients of 50V for 100ms, and have a basic isolation level from input to output of 2250Vdc. Control and protection features include input under-voltage lockout, output over voltage protection, current limit, short circuit protection and thermal shutdown. Full operating temperature range of the device is -40 to +100degC, and it is fully RoHS 6/6 compliant.

With the evolution of wireless technology platforms such as GSM, 3G, WiMAX and TD-SCDMA, SynQor is well positioned with the introduction of these new solutions to aid in the seamless transition of global communications. Other targeted markets include electronic countermeasure applications such as RF jammers to counter Remote Controlled Improvised Explosive Devices (RCIED’s), military communication equipment, and homeland security applications.

Key semiconductor technologies used in these areas include Lateral Diffused Metal Oxide Semiconductor (LDMOS), Gallium Arsenide (GaAs) and Gallium Nitride (GaN) power transistors. These transistors typically need a supply voltage centered on either 28V or 50V, but importantly the supply voltage needs to be optimised for each individual application. The 28V IQ24280HxC devices therefore offer an output trim range of -50% to +20%, while the 50V IQ24500HxC devices offer a trim range -50% to +10%, thereby covering a multitude of different requirements.