New Power Amplifier from SiGe Semiconductor Boosts Performance of Wi-Fi systems

16th April 2008
Posted By : ES Admin
New Power Amplifier from SiGe Semiconductor Boosts Performance of Wi-Fi systems
SiGe Semiconductor, Inc. today announced a new power amplifier designed to optimize performance of Wi-Fi systems including access points, personal computers and PC cards.
The new SE2587L power amplifier is based on SiGe Semiconductor’s proven high-performance architecture, which delivers excellent linearity at industry leading transmit power levels of +19dBm in 802.11g mode and +24dBm in 802.11b mode. The high linearity optimizes transmission of greater data rates over longer distances, thereby allowing systems to support emerging wireless multimedia applications such as video distribution, video streaming and high-speed data.

The SE2587L is the smallest of SiGe Semiconductor’s discrete power amplifiers, packaged in a 3x3 QFN package. The device pin-out sequence is compatible with the company’s widely used SE2527L, SE2528L and SE2581L, minimizing the layout changes and allowing manufacturers to easily migrate to the new device for next-generation designs. To further reduce system cost, SiGe Semiconductor offers application notes and support to replace discrete inductors used for output matching to patterned-on traces, taking advantage of the board space freed by the smaller footprint of the SE2587L. This could result in a savings of about 20% off the external bill of materials.

“With the SE2587L, we have worked closely with our customers to deliver the high performance they expect from SiGe in a form factor that is ideal for optimization of board layout and system cost,” said Jose Harrison, director, product marketing, computing and consumer. “The combination of our power amplifier and applications support is unique in the industry. Our design expertise offers an innovative solution to efficiency and cost reduction.”

The SE2587L is based on SiGe’s proven power amplifier architecture optimized for 802.11b and 802.11g operation. Leveraging an advanced silicon germanium technology, the device features a market-leading combination of linearity, accuracy and stability. The power amplifier is characterized for both 3.3V and 5V operation for nominal and high power applications, respectively. SiGe integrates the reference voltage generator on-chip, allowing the PA to be enabled with a standard 1.8V CMOS digital signal, and eliminating the large and current hungry external reference voltage generators. The power amplifier also integrates power detector that maintains accuracy even under high antenna mis-match.

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