Dual channel MOSFET protects battery
Claimed to offer best-in-class source-to-source on-resistance (Rss on), the AOC3862 provides the lowest voltage drop and temperature rise in the protection circuit module, says Alpha and Omega Semiconductor. The common-drain 12V dual n-channel MOSFET has a low on-resistance, typical 2.38mΩ at 4.5V and 2.5mΩ at 3.8V gate drive gate drive.
It is offered in a 3.55 x 1.77mm AlphaDFN package, with rear protection to add reliability and safety when mounting the small devices onto the PCB, says the company. The design makes it suitable for the protection circuit in high capacity battery packs, used in most new smartphones.
Higher charging current applied in a short space of time, and space constraints have led to a change in the protection circuit design for smartphone battery packs. These factors mean designers have to control the temperature rise to a minimum level within tighter board space. This is done by reducing both channel resistance and distribution resistance.
A battery protection board is shielded in a very limited space inside the battery pack, so thermal dissipation is always a big concern. The company says that the low Rss device helps to cut thermal production at the root, to generate less temperature rise, before trying to dissipate it out.
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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| Stock: | 3490 |
| Cost: | $3.95 |
