4th gen GaN on Si delivers greater than 70% peak efficiency
4th gen GaN on Si (Gallium Nitride on Silicon) technology, which delivers greater than 70% peak efficiency and 19dB gain for modulated signals at 2.7GHz, has been introduced by M/A-COM Technology Solutions (MACOM). This is similar to GaN on SiC technologies and more than 10% greater efficiency than LDMOS.
Delivering power density that is more than four times that of LDMOS, Gen4 GaN is expected to yield GaN-based devices that are half the semiconductor cost per watt of comparable LDMOS products. In addition, the technology is also expected to significantly lower cost than comparably performing GaN on expensive SiC wafers at volume production levels.
“Gen4 will unlock the full promise of GaN for mainstream commercial applications. We expect its impact on the RF and microwave industry will be transformative,” said John Croteau, President and CEO, MACOM. “Our GaN IP portfolio and strategic licensing agreements set the foundation for a sustainable, cost-efficient technology and supply chain model enabling GaN production at unprecedented economies of scale. These breakthroughs position MACOM as the preeminent supplier of compound semiconductors for RF & Microwave applications.”
Gen4 GaN technology is available now in sample quantities.
MACOM will exhibit its Gen4 GaN technology at IMS 2015, which takes place from 19th to 21st May. The company will be situated at booth 2839.
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