Vishay expands TrenchFET Gen III family with SiA447DJ and Si5429DU devices

Offered in the ultra-small PowerPAK SC-70 package, the 12 V SiA447DJ features an on-resistance of 13.5 mΩ at 4.5 V, which is 12 % lower than the closest competing device. In addition, the SiA447DJ offers low on-resistance of 19.4 mΩ at 2.5 V, 35 mΩ at 1.8 V, and 71 mΩ at 1.5 V. The 30 V Si5429DU is the first Gen III p-channel MOSFET in the 3 mm by 1.8 mm form factor, and its on-resistance of 22 mΩ at 4.5 V is 35 % lower than the closest competing device. In addition, the MOSFET offers an industry-low on-resistance of 15 mΩ at 10 V.

The SiA447DJ and Si5429DU will be used for battery or load switching in power management applications for portable electronics such as smart phones, tablet PCs, and mobile computing devices. The MOSFETs’ compact packages save PCB space in these products, while their low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The MOSFETs’ low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.

The 30 V rating of the Si5429DU makes it the device of choice for end products with multi-cell Li-ion batteries, while the SiA447DJ will be used when size and lower on-resistance are critical. In addition, the SiA447DJ’s on-resistance ratings down to 1.5 V allow the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, saving the space and cost of level-shifting circuitry.