SemiQ launches 1,200V Gen3 SiC MOSFET modules in SOT-227 package

In addition to smaller die sizes, third generation SiC devices offer faster switching speeds and reduced losses.

The family of highly rugged and easy mount devices currently offers six devices with an RDSon range of 8.4 to 39mΩ: GCMS008C120S1-E1, GCMX008C120S1-E1, GCMS016C120S1-E1, GCMX016C120S1-E1, GCMS040C120S1-E1, and GCMX040C120S1-E1, with the GCMX040C120S1-E1 having a switching time as low as 67ns. In addition to these six, two further modules – GCMS080C120S1-E1 and GCMX080C120S1-E1 – are available, each with an RDSon of 80mΩ.

The COPACK MOSFETs with Schottky barrier diode provides exceptional switching losses at high junction temperature due to the low turn on switching losses.

SemiQ is targeting the robust SiC MOSFET modules at applications including solar inverters, energy storage systems, battery charging, and server power supplies. All devices have been screened with wafer-level gate-oxide burn-in tests and tested beyond 1,400V, with avalanche testing to 330mJ (RDSon = 39mΩ) or 800mJ (RDSon = 16.5 or 8.4mΩ).

In addition to having a drain-to-source voltage (VDS) of 1,200V, the MOSFET reduces total switching losses to as low as 468µJ and a reverse recovery charge of 172nC (GCMX040C120S1-E1). The family also has a low junction-to-case thermal resistance and comes with an isolated backplate and the ability to directly mount to a heatsink by 4kVAC galvanic isolation testing.

Specifications: ratings and electrical/thermal characteristics

The QSiC 1,200V MOSFET modules have a continuous operational and storage temperature of -55^oC to 175^oC. It has a recommended operational gate-source voltage of -4.5/18V, with a VGSmax of -8/22V, and a power dissipation of 183 to 536W (RDSon = 39 and mΩ, core and junction temperature 25^oC).

For static electrical characteristics, the device has a junction-to-case thermal resistance of 0.23^oC per watt (RDSon = 8.4) as well as a typical zero-gate voltage drain current of 100nA, and a gate-source voltage current of 10nA.

The fastest switching device has a turn-on delay time of 13ns with a rise time of 7ns; its turn-off delay time is 18ns with a fall time of 29ns.