Overview of WBG and SiC capabilities
In this video Brandon Becker, Product Manager of Industrial Wide Band Gap at ON Semiconductor will give you an overview of wide bandgap capabilities focusing on self and carbide SiC for short silicon power devices.
Silicon Carbide (SiC) and Gallium Nitride (GaN) are the next generation materials for high performance power conversion and motor control. These Wide Band Gap (WBG) materials will power future applications for high performance.
Market trends and tightening industry standards are driving the need for more energy efficient products. Power supplies and solar inverters need higher efficiency and increased power density. Electric vehicles are constantly pushing for more miles per charge and faster charging times.
Wide Band Gap technologies provide advanced performance:
- Faster switching
- Lower power losses
- Increased power density
- Higher operating temperatures
This performance is aligned with future market demands and trends:
- High efficiency
- Compact solutions
- Lower weight
- Reduced system cost
- Increased reliability
Key applications for Wide Band Gap devices:
- Solar boost converters and inverters
- Power factor correction
- Electric vehicle charging
- Uninterruptible power supplies
- Server and telecom power supplies
Watch the video below to find out more information.
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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| Stock: | 3490 |
| Cost: | $3.95 |
