Infineon Extends Power Conversion MOSFET Portfolio; New 200V and 250V OptiMOS Bring Industry Performance Leader Products in Their Voltage Class

Engineers that until now designed 48V power supplies using a diode-based rectification stage in the SMPS (switched mode power supply) now have an alternative that enables overall efficiency levels exceeding 95 percent, which is 2 percent higher than typical today and translates to 30 percent lower power losses. This fulfills growing demands for higher efficiency in telecommunication networking markets, where business customers are seeking economic and market positioning advantages based on “green” technology infrastructure.

“Infineon’s OptiMOS technology consistently sets the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics that enable reduced power losses and improved overall efficiency,” said Andreas Urschitz, Vice President and General Manager, Industrial and Multimarket Division at Infineon Technologies. “Our commitment to continuous improvement in manufacturing process and packaging allows us to extend the product family into a higher voltage range, in line with our company-wide strategy to address the energy efficiency challenges facing modern society.”

OptiMOS 200V and 250V family devices feature R DS(on) (on-state resistance) 50 per-cent lower than alternative devices, which translates to the lowest possible power losses in high current applications. The industry’s lowest gate charge (Q g) – up to 35 percent less than alternatives – contributes to low losses and fast switching in switched mode applications like isolated DC-DC converters for telecom applications. Additionally, the device family allows system cost improvement through reduced device paralleling; the ability to use smaller heat sinks as a result of the low on-state resistance; and a fast and low complexity design process due to optimized switching behaviour.

The outstanding characteristics of the OptiMOS 200V and 250V family allow use of a slim SuperSO8 package (5mm x 6mm x 1mm) for applications that previously required bulky D²PAK devices (9mm x 10mm x 4.5mm). Going from D²PAK to SuperSO8 reduces the power semiconductor space requirement by more than 90 percent and enables higher power density systems. Additionally, using leadless packages like SuperSO8 provides ideal switching behaviour and high efficiency levels.