GaAs MESFET delivers 26.5 dBm P1dB at 12 GHz
Distributor RFMW announces availability of the MwT-9F GaAs MESFET from Microwave Technology (MwT).
It delivers 26.5 dBm P1dB at 12 GHz and is ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range.
Small signal gain is 11 dB.
Offered in a 485 x 315 micron chip, the MwT-9F can be used in military and hi-rel SWaP designs and is also available in multiple packaged configurations, all with MTBF values better than 1×108 hours at 150 degrees C channel temperature.