Automotive dual MOSFETs minimise power losses

23rd March 2017
Barney Scott

Diodes Incorporated has introduced the DMNH4015SSDQ and DMTH6016LSDQ. Featuring low figure-of-merit on-resistance and gate charge specifications, these latest 40V and 60V dual, co-packaged enhancement mode MOSFETs minimize power losses, enabling cost-effective, high-efficiency, automotive-compliant power management solutions. 

Targeted at synchronous rectification applications in automotive instrumentation clusters, head-up displays, and infotainment, navigation and driver assistance systems, the DMNH4015SSDQ and DMTH6016LSDQ are qualified to AEC-Q101 Rev-D standard for high reliability and supported by a PPAP (production part approval process).

When coupled with a PWM control IC, these dual MOSFETs are capable of creating highly efficient and cost-effective DC-DC converters. For example, when switched at 400kHz, the 60V DMTH6016LSD delivers a 5V output at a load current of 2A, while achieving an efficiency of 95%. Similarly, the 40V DMNH4015SSDQ delivers 5V at 2A with an efficiency of 91%.

Both devices are 100% avalanche rated to withstand the high pulse energy that can result from inductive loads, and are specified with a maximum junction temperature of 175°C for operation in high ambient temperature environments. The DMNH4015SSDQ and DMTH6016LSDQ are supplied in the standard, space-saving SO-8 package

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