Wolfspeed extends SiC Schottky diode portfolio

Beneficial characteristics of the new SiC Schottky diodes include: zero reverse recovery current, zero forward recovery voltage, high frequency operation with low EMI, temperature-independent switching behavior, extremely fast switching, reduced heat sink requirements, near-zero switching losses, and significantly higher efficiency, as well as industry-leading surge capabilities, as compared to analogous silicon diodes.

A positive temperature coefficient on VF also enables parallel devices without thermal runaway, and each of the four new diodes provides engineers with an attractive price/performance ratio when compared to competitive offerings.

The new 650V 12A C3D12065A and 16A C3D16065A Z-Rec SiC Schottky diodes are supplied in TO-220-2 packages, and are targeted at PFC boost stages in server power supplies, especially next-generation systems rated for 1100W, 1600W, 2000W, and 2400W with low-line or high-line inputs.

They’re also available as bare die with part numbers: CPW2-06500S012B and CPW2-0650-S016B. The new 650V 2x15A C3D30065D Z-Rec diodes are supplied in TO-247-3 packages, and are best suited for rectification applications in 3–5kW power supplies. Also supplied in TO-247-3 packages, the new 1200V 2x7.5A C4D15120D Z-Rec diodes are ideal for use in PV inverters and on- and off-board chargers.

Additionally, as is the case with all C3D and C4D Schottky diodes from Cree, all four new diodes have a dV/dt rating of 200V/ns — the industry’s highest. This high dV/dt rating makes Cree’s Schottky diodes the perfect pairing for both silicon IGBTs and SiC MOSFETs, enabling high-speed system optimisation while simultaneously maximising reliability, minimising dead time, and enabling greater resonant frequencies. All four of the new Z-Rec SiC Schottky diodes are also halogen-free, RoHS compliant, and REACH certified.