Diode's technology leads to lower static losses
Now being shipped by Farnell is the 1200V TRENCHSTOP IGBT7 and emitter-controlled EC7 diode from Infineon. Packaged in the Easy housing, this EasyPIM IGBT7 provides higher power density, lower system cost, and reduced system size. The diode’s technology is based on latest micro-pattern trenches technology and optimised for industrial drive applications which means much lower static losses to meet energy efficiency requirements, softer switching and improved controllability.
Additionally, by raising the allowed maximum overload junction temperature up to 175 °C in the power module, a significant increase of power density can be obtained.
The diode is available in a range of modules; the EasyPIM 1B 1200V, three phase input rectifier PIM (Power Integrated Modules) in 10A and 25A options and the 1200V six-pack IGBT moduleEasyPACK 2B 1200V, 100A six-pack IGBT module.
The new modules are designed with the same pin out as TRENCHSTOP IGBT4 modules, which support design engineers in reducing design effort.
They also enable a higher output current in the same package, or the similar output current in a smaller package resulting in more compact inverter designs where needed.
All module types are equipped with Infineon’s PressFit mounting technology for low ohmic resistance and reduced process time.
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