Optoelectronics

Photodiodes provide 9.5µA high reverse light current

11th September 2014
Nat Bowers
0
Datasheets

Targeting photo detection in applications such as light curtains, light barriers, metering systems, switches and rain and sun sensors, Vishay has announced two automotive-grade high-speed silicon PIN photodiodes. The VEMD6010X01 and VEMD6110X01 provide a high reverse light current of 9.5µA (three times that of previously released devices, according to Vishay) and a very low dark current of 1nA.

The AEC-Q101-qualified devices operate over a temperature range from -40 to +110°C and feature fast response times and ±60° angles of half intensity. Supplied in clear- and black-epoxy 1206 surface-mount packages measuring 4x2x1.05mm, the photodiodes provide a sensitive area of 0.85mm2.

Suited for the detection of visible and near infrared radiation, the VEMD6010X01 is a clear epoxy device with a wide sensitivity range of 450-1100nm and 900nm wavelengths of peak sensitivity. Featuring a daylight blocking filter matched with 830-950nm IR emitters, the VEMD6110X01 is a black epoxy photodiode for 750-1050nm infrared applications.

The RoHS-compliant and halogen-free photodiodes support lead (Pb)-free processing and provide a moisture sensitivity level of 4, in accordance with J-STD-020, for a floor life of 72 hours. Samples and production quantities are available now with lead times of 10 weeks for large orders.

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