Memory

MRAM device offers SRAM-compatible 35ns read/write timing

11th March 2015
e2v
Barney Scott
0

Offering a significantly decreased package footprint size, e2v has announced the release of a stacked-package 32Mb MRAM-based product, the highest density MRAM device in the industry. The EV5A16B is a stacked solution, featuring two 16Mb MRAM devices from Everspin Technologies, and is offered in a 54-pin stacked-package TSOP.

Available in commercial (0 to +70°C) and industrial (-40 to +85°C) temperature ranges, the MRAM technology offers SRAM-compatible, 35ns read/write timing with data retention and endurance and is used with MPUs, DSP, storage systems, instruments, and FPGAs.

Brad Little, Vice President and General Manager, Semiconductor Business Unit, e2v, commented, “Our stacked-package MRAM will have a significant impact on our customers’ systems by addressing the industry requirements for a high-density memory, available in a small footprint with the ability to increase system performance. By improving the size, weight and power of our product you are also talking about major cost savings for the customer.”

The EV5A16B is available now.

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