Memory
Smarter devices demand smarter NAND
Demand for NAND-based digital memory is booming, driven by increased use of devices that span the consumer and mobile markets, automotive and industrial sectors and the emerging Internet of Things (IoT). By Eugen Pfumfel, Principal Engineer, Memory Marketing, Toshiba Electronics Europe
Low-power SRAM IP targets wearable & IoT applications
An embedded SRAM IP that targets applications demanding long battery life with minimal operating and stand-by power performance has been released by sureCore. Supporting a wide operating voltage range of 0.7-1.2V, the single port SRAM boasts dynamic power savings exceeding 50% of current commercial offerings. The IP also cuts static power by up to 35% with a 10% area penalty.
SDRAM devices available with original Micron part numbers
Alliance Memory has announced that its 512M SDRAM devices, which it recently acquired from Micron Semiconductor, will be available with their original Micron part numbers into 2017.
Instant-on FPGA now includes on-chip flash memory
Expanding the MachXO3 FPGA family, Lattice Semiconductor has announced that the MachXO3LF are provided with on-chip Flash for configuration and usage. They utilise the same advanced package technology as the MachXO3L family to provide a small-footprint, the highest I/O density on the market and easy migration without changing PCB design.
6Gb/s SATA-compatible SSDs suit a multitude of applications
TDK has announced the August 2015 availability of its SDS1B series of 6Gb/s Serial ATA compatible 2.5" SSDs for industrial applications, featuring the GBDriver GS1 NAND flash memory controller chip. The SSDs are designed for use in factory automation, railway equipment, kiosk, POS, ATM, banking & till terminals, in-car navigation systems, office equipment, digital signage, medical measuring & diagnostic equipment, 4G LTE-A base ...
SRAM designs are production-ready, low power & low voltage
sureCore has announced the opening of its latest design centre in Leuven, Belgium. The company chose the Leuven location to tap into the design ecosystem around imec and to maximise imec's recently announced investment in the company.
CMOS DDR SDRAMs feature fast clock rates of 200MHz & 166MHz
A line of high-speed CMOS DDR SDRAMs, which provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications and telecomms products, has been introduced by Alliance Memory. The line of devices consists of the AS4C32M8D1, a 256Mb DDR SDRAM, the AS4C64M8D1 a 512Mb DDR SDRAM and the AS4C64M16D1, a 1Gb DDR SDRAM. The devices are available in a 60-ball 8x13x1.2mm TFBGA package or a ...
Serial EEPROMs increase smart lighting design flexibility
Serial EEPROMs, which operate at temperatures of up to 105°C, have been introduced by STMicroelectronics. The EEPROMs are claimed to deliver the industry’s most complete selection of densities, bus interfaces and packages, giving designers extra flexibility to upgrade data and parameter storage without making PCB design changes.
World's first 48-layer 3D stacked cell flash memory
Toshiba has announced the development of the world’s first 48-layer 3D stacked cell structure flash memory, called BiCS, a 2-bit-per-cell 128Gb (16GB) device. The BiCS is based on a leading-edge 48-layer stacking process, which enhances the reliability of write / erase endurance and boosts write speed, and is suited for use in diverse applications, primarily SSD.
NAND Flash memory supports 'command queueing'
Compliant with JEDEC e•MMC Version 5.1 (released in February 2015), Toshiba Electronics Europe has announced embedded NAND flash memory products supporting 'command queueing' and 'secure write protection' features. The devices are designed for use in a wide range of digital consumer products, including smartphones, tablets and wearable devices.