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Ceramic GaN on SiC RF power transistor for avionics

18th September 2013
Nat Bowers

M/A-COM Technology Solutions introduce a new ceramic GaN on SiC HEMT Power Transistor for avionics applications. The MAGX-001090-600L00 is a gold-metalized, matched GaN on Silicon Carbide, RF power transistor optimized for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems.

The MAGX-001090-600L00 provides 600 W of output power with a typical 21.4 dB of gain and 63% efficiency. The device has very low thermal resistance of 0.05 0C/W and best-in-class load mismatch tolerance of 5:1. In addition, the device has the lowest pulse droop of 0.2 dB and also can be used effectively under more demanding Mode-S ELM operating conditions.

MACOM’s GaN transistor technology has been fully qualified with accelerated, high-temperature lifetime tests and this device has a predicted MTTF of over 600 years at a maximum junction temperature of 200 0C. The device also boasts very high breakdown voltages, which provides customers with reliable and stable operation even in extreme load mismatch conditions.

Paul Beasly, Product Manager at M/A-COM Technology Solutions, commented: “MACOM’s GaN power technology offers a significant advantage in higher gain, higher efficiency and improved reliability compared to similar Si Bipolar and LDMOS power transistors. The device also provides the highest load mismatch tolerance in its class - a critical parameter to ensure the highest reliability and performance in demanding avionics applications.”

The table below outlines typical performance:

MAGX-001090-600L00 specification table

Evaluation boards of MAGX-001090-600L00 are available from stock.

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