Infineon powers RF in Samsung Galaxy S5 smartphone

15th July 2014
Nat Bowers

With a total of eight RF components in Samsung's Galaxy S5 smartphone, Infineon Technologies has supplied the BGA7L1N6, BGA7M1N6 and BGA7H1N6 LTE LNAs (Low Noise Amplifiers), the BGM7MLLM4L12 and BGM7LLHM4L12 quad-band LTE LNA banks, the BGS12PL6 and BGS12SL6 SPDT RF switches and the BGA824N6S GPS LNA.

Compared to solutions without LNAs, Infineon’s LTE LNAs and Quad LNA banks are designed to enhance the data rate in smartphones by up to 96%. This enables OEMs to exploit the speed of the LTE communication standard. The SPDT RF switches were chosen to reliably route the RF signals to their designated paths and the GPS LNA ensures reliable navigation functionality by effectively preventing interference from other signals present in the phone.

The latest model of Samsung Electronics’ flagship smartphone, the Galaxy S5 is equipped with two internal WiFi antennas and a Download Booster that achieves outstanding transfer rates by combining the data transmission via LTE and WiFi.

Philipp von Schierstaedt, Vice President and General Manager, RF & Protection Devices, Infineon Technologies, commented: “The smartphone market shows unrivalled innovation speed. Being able to offer new product generations with higher integration and smaller footprint in next to no time is the key to success. We are proud to be chosen by leading players in this field like Samsung to help bring reliable service and more functionalities to the users."

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