GaN transistor covers 100MHz to 2690MHz frequency range
The A3G26D055N Airfast RF power gallium nitride (GaN) transistor from NXP Semiconductors is now being shipped by distributor Mouser Electronics.
This transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability.
The 8W symmetrical Doherty RF transistor provides a wide frequency range from 100MHz to 2690MHz.
It offers an 18db power gain (typical) at 2675MHz with 54.1% efficiency.
Other features are high terminal impedances and a highly linearised Error Vector Magnitude (EVM), making it optimal for massive MIMO active antenna systems for 5G base stations.
Applications for the NXP A3G26D055N transistor include 5G massive MIMO, W-CDMA and LTE, macrocell base stations and drivers, small cell final stage, active antennas, and general-purpose telecom.
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