GaN transistor covers 100MHz to 2690MHz frequency range
This transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability.
The 8W symmetrical Doherty RF transistor provides a wide frequency range from 100MHz to 2690MHz.
It offers an 18db power gain (typical) at 2675MHz with 54.1% efficiency.
Other features are high terminal impedances and a highly linearised Error Vector Magnitude (EVM), making it optimal for massive MIMO active antenna systems for 5G base stations.
Applications for the NXP A3G26D055N transistor include 5G massive MIMO, W-CDMA and LTE, macrocell base stations and drivers, small cell final stage, active antennas, and general-purpose telecom.