Vishay Siliconix Dual 20 V P-Channel TrenchFET Gen III Power MOSFET Offers Industry's Lowest On-Resistance Down to 54 mΩ at 4.5 V in the 2 mm by 2 mm Footprint Area

10th February 2011
Source: Vishay
Posted By : ES Admin
Vishay Siliconix Dual 20 V P-Channel TrenchFET Gen III Power MOSFET Offers Industry's Lowest On-Resistance Down to 54 mΩ at 4.5 V in the 2 mm by 2 mm Footprint Area
Vishay today introduced a new dual 20 V p-channel TrenchFET Gen III power MOSFET with an 8 V gate-to-source voltage featuring the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK SC-70 2 mm by 2 mm footprint area.
The new SiA923EDJ will be used for DC/DC converters, as well as for charger and load switches in handheld devices such as smartphones, MP3 players, tablet PCs, and eBooks. The MOSFET's lower on-resistance translates into lower conduction losses, saving power and prolonging battery life between charges in these devices.

The SiA923EDJ offers an ultra-low on-resistance of 54 mΩ at 4.5 V, 70 mΩ at 2.5 V, 104 mΩ at 1.8 V, and 165 mΩ at 1.5 V. The closest competing p-channel device with an 8 V gate-to-source rating features on-resistance of 60 mΩ at 4.5 V, 80 mΩ at 2.5 V, 110 mΩ at 1.8 V, and 170 mΩ at 1.5 V. These values are 10 %, 12 %, 5 %, and 3 % higher, respectively, than the SiA923EDJ.

The MOSFET's on-resistance ratings down to 1.5 V allow the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, without the space and cost of level-shifting circuitry. The SiA923EDJ's low on-resistance also means a lower voltage drop at peak currents to better prevent unwanted undervoltage lockout events. The compact 2 mm by 2 mm PowerPAK SC-70 package is half the size of the TSOP-6, with comparable or better on-resistance and the ability to dissipate 65 % more power under the same ambient conditions.

The SiA923EDJ is 100 % Rg tested, is halogen-free in accordance with IEC 61249-2-21, and is compliant to RoHS Directive 2002/95/EC. The MOSFET offers typical ESD protection of 2500 V.

The SiA923EDJ complements the previously released 20 V SiA921EDJ p-channel MOSFET with a 12 V gate-to-source maximum voltage rating. With the release of the SiA923EDJ, designers can now choose between the higher gate drive voltage of the SiA921EDJ or a device with a lower threshold voltage and lower on-resistance.

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