Vishay Siliconix Released Asymmetric Dual TrenchFET Power MOSFET in PowerPAIR 6 mm by 3.7 mm Package

Before the PowerPAIR package type, designers would have to use two single devices to achieve the low on-resistance and high maximum current required for system power, POL, low-current DC/DC, and synchronous buck applications in notebooks, VRMs, power modules, graphic cards, servers, and gaming consoles. The SiZ710DT's specifications allow designers to use one device that is one third smaller than two discrete PowerPAK 1212-8 devices, or two thirds smaller than two discrete SO-8 devices, saving solution cost and space, including the PCB clearance and labeling area in between the two discrete MOSFETs.

In addition, replacing SO-8 devices in lower-current and lower-voltage applications can increase efficiency. A single PowerPAK 1212-8 or SO-8 has on-resistance down to the 5 mΩ or 4 mΩ range, respectively. However, the low-side Channel 2 MOSFET of the SiZ710DT utilizes the optimized space from the asymmetric structure and offers a lower on-resistance of 3.3 mΩ at 10 V and 4.3 mΩ at 4.5 V, and a maximum current of 30 A at + 25 °C and 24 A at + 70 °C. In addition, the high-side Channel 1 MOSFET features an improved on-resistance of 6.8 mΩ at 10 V and 9.0 mΩ at 4.5 V.

By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. In addition, the SiZ710DT's pinning is arranged so that the input is on one side and the output is on the other, further simplifying the layout and saving PCB space.

The device is 100 % Rg and UIS tested, compliant to RoHS directive 2002/95/EC, and halogen-free according to IEC 61249-2-21.