Vishay Siliconix 30-V P-Channel TrenchFET Gen III Power MOSFET Sets New Industry First with 2.6-mΩ Maximum On-Resistance in SO-8 Footprint Area

Packaged in the PowerPAK SO-8, the Si7145DP will be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems. Its low on-resistance translates into lower conduction losses, allowing the Si7145DP to do a better job of saving power and prolonging battery life between charges. This capability is especially important in adaptor switches (switching between the adaptor/wall power or the battery power), which are always on and drawing current.

The next-best 30-V p-channel device in the SO-8 footprint available from a competitor features maximum on-resistance of 3.1 mΩ at a 10-V and 4.3 mΩ at 4.5 V, meaning 16 % and 13 % higher than the Si7145DP.

Vishay Siliconix was the industry's first supplier to introduce Trench power MOSFETs. The company's TrenchFET intellectual property includes numerous patents, including fundamental technology patents dating from the early 1980s. Each new generation of TrenchFET technology yields products that raise the bar for power MOSFET performance in a wide range of computing, communications, consumer electronics, and many other applications.

The device is 100 % Rg- and UIS-tested and halogen-free.

Additional p-channel TrenchFET Gen III power MOSFETs with a range of voltage ratings and package options will be released by Vishay throughout 2009.