Extending its portfolio of surface mount Schottky barrier diodes, Toshiba has introduced the CxS15S30 device. Based on the latest Toshiba semiconductor process, the new SBD features improved forward voltage and reverse current performance. The CxS15S30 is ideal for space-limited applications requiring high current handling and low forward voltage.
The CxS15S30 can also be used in general high-speed switching applications thanks to its total typical diode capacitance of just 200pF. The new SBD offers 1.5A and 30V maximum ratings for average rectified current and peak reverse voltage, respectively.
Featuring a low typical forward voltage rating of VF = 0.39V at 1.5A, the CxS15S30 delivers the high-efficiency operation demanded by battery-powered and other power-sensitive designs. Low typical reverse current of only 200μA ensures lowest loss operation in most common applications such as LED backlight circuits or current backflow prevention in battery charging.
Measuring only 1.6 mm x 0.8 mm x 0.48 mm, the CCS15S30 is supplied in a 2 pin ultra-compact LGA type CST2C package; while the CUS15S30 comes in a 2 pin standard SOD-323 package.