Topside cooling eases GaN component integration

17th March 2015
Posted By : Barney Scott
Topside cooling eases GaN component integration

GaN Systems has added a topside cooling technology to its wide range of high-power enhancement-mode devices. Topside cooling enables engineers to use conventional, well-understood PCB cooling techniques when incorporating GaN Systems’ semiconductors into designs for products such as inverters, UPS, EVs, HEVs, high voltage DC-DC conversion and consumer products such as TVs.

GaN Systems’ gallium nitride power transistors are based on its proprietary Island Technology, whereby the die consist of islands rather than traditional fingers, offering advantages in terms of current handling, inductance, scaling, isolation and thermal management, as well as enabling smaller die and lowering cost.

GaN Systems’ enhancement-mode devices with current ratings ranging from 8 to 250A are delivered in its GaNPX packaging. In GaNPX packaging, the die is embedded within a laminate construction and a series of galvanic processes replace conventional techniques such as clips, wire bonds and moulding compounds. These near-chipscale high power switching transistors are packaged to be cooled via the topside of the chip using a heat sink or fan – conventional techniques that are well-understood and familiar to design engineers who may be unfamiliar with using GaN devices or using them for the first time.

GaN transistors can also be cooled from the bottom surface of the die through conduction to the PCB.


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