Power

Third generation IGBT sets power efficiency benchmarks

11th May 2016
Caroline Hayes
0

1,200V IGBTs, based on third generation Ultra Field Stop technology have been launched at PCIM by ON Semiconductor. The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are achieve industry-leading total switching loss characteristics, claims the company, due in part to a wide, highly activated field-stop layer and optimised co-pack diode.

The NGTB40N120FL3WG has an Ets of 2.7mJ, and the NGTB25N120FL3WG has an Ets of 1.7mJ. Both devices have a VCEsat of 1.7V at the respective rated currents. The NGTB40N120L3WG is optimised for low conduction losses and has a VCEsat of 1.55V, at rated current, with an Ets of 3.0mJ. Each is co-packaged with a fast recovery diode that has soft turn-off characteristics and minimal reverse recovery losses, says the company. The NGTB40N120L3WG is mainly targeted at use in motor drives, while the others target UPS (uninterruptible power supplies) and solar inverters.

All three are supplied in RoHS-compliant TO−247 packages.

Visit ON Semiconductor at PCIM Hall 9 – 353

 

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