SiC Schottky barrier diodes boost power efficiency

13th May 2016
Posted By : Caroline Hayes
SiC Schottky barrier diodes boost power efficiency

At PCIM Europe 2016, Rohm Semiconductor introduced its third generation SiC Schottky barrier diodes, whih it believes is the first of their kind rated at 650V at 6.0, 8.0 and 10A.

They are supplied in a TO220AC package and realise lowest VF and lowest IR within the temperature range, compared with others available, says the company. They also support high surge current capability, making them suitable for power supply applications.

SiC diodes exhibit more stable temperature characteristics and short reverse recovery time compared with silicon-based devices. These characteristics make them suitable for high speed switching. Stable low forward voltage at high temperatures, mean that the SiC SBDs guarantee minimum reverse current.

The devices have a PN junction structure as well as a Schottky barrier for durability in bipolar operation.

Other features of the diodes are VF at 10A (25°): typ. 1.35V and 1.44V at 150°. IR at 25° is typically 0.03μA at 650V. Operating temperature is up to 175°.

A lower current rating device and D2pak (LPTL) package will be available in June.


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