SiC power MOSFETs enhance hard-switching performance

10th October 2019
Posted By : Mick Elliott
SiC power MOSFETs enhance hard-switching performance

Availability and full design support capabilities for a new family of 1200V SiC power MOSFETs from Wolfspeed has been announced by distributor Richardson RFPD. Based on third-generation planar MOSFET technology, the new devices include a rugged intrinsic body diode that allows for third-quadrant operation without the need for an additional external diode.


According to Wolfspeed, the product family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature.

Wolfspeed designed these third-generation MOSFETs with an increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behaviour.

Designers can reduce component count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance

The new devices are suitable for a range of applications, including solar energy systems, EV charging, uninterruptible power supply (UPS), SMPS, motor control and drives, and energy storage.


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