SiC power MOSFETs enhance hard-switching performance

10th October 2019
Posted By : Mick Elliott
SiC power MOSFETs enhance hard-switching performance

Availability and full design support capabilities for a new family of 1200V SiC power MOSFETs from Wolfspeed has been announced by distributor Richardson RFPD. Based on third-generation planar MOSFET technology, the new devices include a rugged intrinsic body diode that allows for third-quadrant operation without the need for an additional external diode.

 

According to Wolfspeed, the product family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature.

Wolfspeed designed these third-generation MOSFETs with an increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behaviour.

Designers can reduce component count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance

The new devices are suitable for a range of applications, including solar energy systems, EV charging, uninterruptible power supply (UPS), SMPS, motor control and drives, and energy storage.

Downloads


You must be logged in to comment

Write a comment

No comments




Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

Connected World Summit 2019
22nd October 2019
United Kingdom The Business Design Centre, London
Hotspots Specials 2019
24th October 2019
Germany Böblingen, Germany
IoT Solutions World Congress 2019
29th October 2019
Spain Barcelona
Maintec 2019
30th October 2019
United Kingdom NEC, Birmingham
NOAH Conference 2019
30th October 2019
United Kingdom Old Billingsgate, London