Power

SiC MOSFETs halve on-resistance

8th November 2016
Caroline Hayes
0

Third-generation SiC MOSFETs, the SCT3080KL 1200V models halve on-resistance as well as reduce input capacitance, without sacrificing form factor.

Third-generation SiC MOSFETS from Rohm Semiconductor reduce on-resistance by 50% across the entire temperature range and input capacitance by 35% in the same chip size compared with planar gate-type SiC MOSFETs. They can enable a reduction in size of peripheral components such as coils and capacitors by increasing switching frequency. As a result, explains the company, conversion efficiency is improved, contributing to miniaturisation, weight reduction, and greater energy efficiencies. The MOSFETs are supplied in a TO-247 package.

At electronica 2016, the company also announced third generation SiC Schottky barrier diodes (SBDs) with what is claimed to be the lowest forward voltage (VF) and lowest reverse leakage current (lR) over the entire temperature range. The TO220AC devices feature high surge current capability for power supply applications. Device options are 650V/6.0, 8.0 and 10A, in D2PAK and TO220FM packages. The company has also added lower current options of 2.0 and 4A. The diodes exhibit ultra-short reverse recovery time compared with silicon-based devices, claims the company, making them particularly suitable for high-speed switching.

SiC modules now available from the company include chopper type modules for converters integrate both, mass-produced Trench SiC MOSFETs and SiC SBDs. In addition to two-inone type modules, 1200V/120A,180A and 300A Chopper type modules are being prepared. The company is also developing a power module which has lower stray inductance.

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