SiC MOSFETs come with 65, 120 and 280 mΩ on-resistance

25th September 2019
Posted By : Mick Elliott
SiC MOSFETs come with 65, 120 and 280 mΩ on-resistance

A robust family of silicon carbide semiconductor devices from Wolfspeed is available with design support from Richardson RFPD. According to Wolfspeed, the E-Series line of SiC MOSFETs represents the industry’s first automotive-qualified, PPAP-capable and humidity-resistant MOSFETs.

The devices include Wolfspeed’s third-generation rugged planar technology, featuring the industry’s lowest switching losses and highest figure of merit.

The E-Series MOSFETs are optimised for use in EV battery chargers and high voltage DC/DC converters for on-board automotive power conversion systems, off-board charging, solar inverters and other outdoor applications.

The devices feature a minimum of 900V drain-source breakdown voltage (Vbr) across entire the operating temperature range, high-speed switching with low output capacitance, 900V blocking voltage with low RDS(on), and fast intrinsic diodes with low reverse recovery (Qrr).

The E-Series is easy to parallel, simple to drive, and available in TO-247-3 packages.


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