SiC MOSFET enables high frequency power control applications

27th September 2018
Posted By : Lanna Cooper
SiC MOSFET enables high frequency power control applications

Expanding its portfolio of SiC MOSFET devices, Littelfuse has introduced its first 1,700V SiC MOSFET, the LSIC1MO170E1000. An important addition to the Littelfuse SiC MOSFET product offering, the LSIC1MO170E1000 is a powerful addition to the company’s 1,200V SiC MOSFETS and Schottky diodes already released. End-users will benefit from more compact, energy-efficient systems and also from a potential lower total cost of ownership.

High efficiency benefits powered by SiC MOSFET technologies offer multiple advantages to many demanding applications including electric and hybrid vehicles, datacentres, and auxiliary power supplies.

When compared to similarly-rated Si IGBTs, the LSIC1MO170E1000 SiC MOSFET enables a number of system level optimisation opportunities, including increased efficiency, increased power density, decreased cooling requirements, and potentially lower system level costs.

Additionally, the Littelfuse SiC MOSFETs deliver on par or better performance in all aspects when compared head-to-head with other SiC MOSFET devices on the market.

Typical applications for the SiC MOSFET LSIC1MO170E1000 include:

  • Solar inverters
  • Switch-mode and uninterruptible power supplies 
  • Motor drives
  • High voltage DC/DC converters
  • Induction heating

“This product can improve existing applications, and the Littelfuse application support network can help new design-in projects,” said Michael Ketterer, Global Product Marketing Manager, Power Semiconductors, Semiconductor Business Unit at Littelfuse.

“SiC MOSFETs offer a rewarding alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly-rated IGBTs. Inherent material properties allow the SiC MOSFET to outclass its Si MOSFET counterparts in terms of blocking voltage, specific on resistance, and junction capacitances.”

The new 1,700V, 1 Ohm SiC MOSFETs, available in a TO-247-3L package, offer these key benefits:

  • Optimised for high frequency, high efficiency applications
  • Extremely low gate charge and output capacitance
  • Low gate resistance for high frequency switching

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