SiC module dramatically reduces switching loss
ROHM Semiconductor has introduced an SiC power module rated at 1,200V/180A based on the company’s completely inhouse supply chain capacities and advanced packaging capabilities. The BSM180D12P3C007 half-bridge SiC module integrates mass-produced trench-type SiC MOSFETs and SiC SBDs in the same footprint as previous modules.
ROHM has pioneered commercial power modules equipped with SiC-MOSFETs and SiC-SBDs and was able to successfully mass-produce the industry’s first trench-type SiC MOSFETs by utilising a proprietary structure, ensuring long-term reliability. This module implements MOSFETs with their advanced UMOS structure going without JFET region and maximising SiC characteristics. It provides the lowest drain source resistance together with high speed switching performance and has almost no recovery loss thanks to the extremely low Vf and the fast recovery performance of the built-in SiC-SBDs.
As a result, the module achieves 77% lower switching loss than conventional IGBT modules and 42% lower switching loss than planar SiC Modules utilising a 2nd Gen SiC-DMOS structure. This not only enables high-frequency operation but also contributes to smaller cooling systems as well as smaller peripheral components which in consequence paves the way to greater energy savings and end-product miniaturisation.
The BSM180D12P3C007 SiC module is available now.
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