MOSFETs’ compact outlines save PCB space and provide ultra-thin profiles to enable slimmer and lighter portable electronics, while their low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices’ low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.
For applications where low on-resistance is more critical than space, the 8 V n-channel Si8424CDB
and - 20 V p-channel Si8425DB
offer maximum on-resistance of 20 mΩ and 23 mΩ, respectively, at a 4.5 V gate drive. The devices are offered in the 1.6 mm by 1.6 mm by 0.6 mm CSP package. With 43 mΩ maximum on-resistance at 4.5 V, the smaller 1 mm by 1mm by 0.55 mm Si8466EDB
8 V n-channel MOSFET will be used for applications where space is even more critical than on-resistance. The Si8466EDB also provides 3000 V typical ESD protection.
The Si8466EDB and Si8424CDB offer on-resistance ratings down to 1.2 V, allowing the devices to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, saving the space and cost of level-shifting circuitry. All devices released today are compliant to RoHS Directive 2011/65/EU and halogen-free according to the JEDEC JS709A definition.
The Si8466EDB, Si8424CDB, and Si8425DB are the latest expansion to the MICRO FOOT family. Samples and production quantities of the new TrenchFET power MOSFET are available now, with lead times of 12 to 14 weeks for larger orders.