Power stages integrate high- & low- side MOSFETs

10th September 2014
Source: Vishay
Posted By : Nat Bowers
Power stages integrate high- & low- side MOSFETs

Delivering currents in excess of 60A per phase, a family of integrated DrMOS power stages has been announced by Vishay Intertechnology. The SiC620 power stages integrate high- and low-side TrenchFET Gen IV n-channel MOSFETs (which are claimed to offer industry-benchmark on-resistance), an advanced MOSFET driver IC and a bootstrap Schottky diode.

The integrated gate driver IC supports tri-state PWM logic of 5 and 3.3V and is compatible with a variety of PWM controllers. It also incorporates zero current detect circuitry to improve light-load efficiency, and an adaptive dead time control to further improve efficiency at all load points.

The SiC620 family is suited for high-power, multi-phase buck regulator applications in notebook PCs, servers, game consoles, graphics cards, switch and storage systems and other high-power CPU-based systems, as well as high-current, non-isolation PoL modules. Fully compliant with the DrMOS 4.0 specification, the regulators operate from an input voltage range of 4.5-16V, provide low PWM propagation delay of less than 20ns and are optimised for 12V input rails.

Supplied in the low-profile, thermally enhanced PowerPAK MLP 5x5mm 31-pin package with a compact 25mm² footprint area, the devices are 30% smaller than previous-gen 6x6mm power stages while enabling 3% higher efficiency (up to a maximum of 95%). Reduced package parasitics enable the SiC620 family to deliver high switching frequencies to 1.5MHz for increased power density and lower overall solution costs. The power stages offer undervoltage lockout, shoot-through protection and a thermal warning feature that alerts the system in case of an excessive junction temperature.

The SiC620 family of integrated DrMOS power stages is available now for sampling and in production quantities, with lead times of 12 weeks for larger orders.

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