Infineon Technologies extents its large portfolio of high voltage devices with a new package: XHP 3. This is a new flexible IGBT module platform for high power applications in the voltage range from 3,3kV up to 6,5kV. The module allows for scalable designs with reliability and highest power density. Due to its symmetrical design with low stray inductance it offers significantly improved switching behaviour.
For this reason, the XHP 3 platform offers a solution for demanding applications such as traction and commercial, construction and agricultural vehicles as well as medium-voltage drives. The high power platform will be showcased at PCIM 2019.
Infineon’s XHP 3 package comprises a compact form factor with 140mm in length, 100mm in width and 40mm in height. The first IGBT modules of this new high power platform feature a half bridge topology with a blocking voltage of 3,3kV and a nominal current of 450A.
In order to meet customers’ demands, two different isolation classes are launched simultaneously: 6kV (FF450R33T3E3) and 10.4 kV (FF450R33T3E3_B5) isolation, respectively. Ultrasonic welded terminals and aluminum nitride substrates along with an aluminum silicon carbide base plate ensure the highest possible level of reliability and robustness.
The high power IGBT module is designed for paralleling and, for this reason, offers a new level of scalability. System designers can now easily adapt the desired power level by paralleling the required number of XHP 3 modules.
To facilitate scaling, Infineon offers pre-grouped devices featuring a matched set of static and dynamic parameters. Using these grouped modules, de-rating is no longer required when paralleling up to eight XHP 3 devices.