Power

P-channel MOSFETs reduce load switching losses

9th December 2015
Nat Bowers
0
Datasheets

Specifically designed for load switching in high-efficiency battery management of portable consumer electronics and IoT applications, two P-channel MOSFETs have been introduced by Diodes Incorporated. The 2x2mm, DFN2020 packaged DMP1022UFDF and DMP2021UFDF are rated at 12V and 20V, respectively.

Circuit designers looking for a simple and inexpensive method of disabling low-voltage power rails will appreciate the guaranteed low on-state resistance (RDS(ON)) of these MOSFETs under low gate drive conditions. This enables power rails down to 1.5V to be switched with minimal conduction losses. The DMP1022UFDF has an RDS(ON) of less than 20mΩ with a -2.5V gate drive, while the DMP2021UFDF achieves under 26mΩ at -1.8V gate drive. Switching off power to idle processor cores and other inactive circuitry using MOSFETs as high-side load switches is a very effective way of extending battery life.

Equally important for space-critical applications is the small 4mm2 footprint DFN2020 package, which has an off-board height of just 0.6mm. This package also features an exposed drain pad with a thermal resistance of less than 10°C/W from junction to pad to assist in extracting heat from the package, reducing die temperature and increasing device reliability.

The DMP1022UFDF is priced at $0.16 each while the DMP2021UFDF is priced at $0.26 each, both in 10,000 unit quantities.

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