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NXP Releases Two New 2x2 mm Leadless Discretes Packages With Industry’s Lowest Height of 0.65 mm

2nd June 2010

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NXP Semiconductors today announced two new small-signal discrete leadless packages measuring 2 mm by 2 mm with industry‘s lowest height of 0.65 mm. Available in a 3-lead (SOT1061) and a 6-lead (SOT1118) version, the plastic SMD (Surface Mount Device) packages offer an increased lifetime with an exposed heat sink for excellent thermal and electrical conductivity. The new products – including 26 types of FET-KYs, dual P-channel MOSFET, low VCEsat transistors and Schottky rectifiers – achieve power dissipation Ptot up to 2.1 Watt. This performance is comparable to products in industry standard package SOT89 (SC-62) while only taking less than half it‘s space on a PCB.

“As board space and power consumption are critical factors in the design of today‘s thin, compact and battery-driven devices, NXP provides a broad portfolio of small packages supporting the industry drive towards smaller form-factor end-user devices,” says Ralf Euler, product marketing manager for small-signal discretes, NXP Semiconductors. “The new portfolio is ideal for applications such as high performance charging circuits, load switches and Switch Mode Power Supply (SMPS) in mobile equipment, smart phones and laptops.”

SOT1061 and SOT1118 are free of halogens and antimony oxides and comply with non-flammability classification UL 94V-0 and RoHS standards.

FET-KYs / Dual P-Channel MOSFET in SOT1118 (PMFPB6532UP, PMFPB6545UP, PMDPB65UP)

* Two 20 V / 3 A FET-KYs with low VF Schottky diode and a 20V dual P-channel MOSFET will be released in new SOT1118 End of June.
* These products come with extra ESD protection of 1 kV (HBM) to increase ESD robustness.
* With a rating of 70 mOhm at 4.5VGS, the new FET-KYs (PMFPB6532UP and PMFPB6545UP) offer the industry‘s lowest on-resistance in the ESD protected 20V category. They also boost lowest VF of 365 mV and 520 mV @ 1A respectively for increased energy efficiency. The dual P-channel MOSFET PMDPB65UP features RDSon down to 70 mOhm @ VGS = 4.5V, ideal for high-efficiency power management applications.

Low VCEsat (BISS) transistors in SOT1061 (PBSS*PA series)

* The 14 new efficient low VCEsat transistors in SOT1061 live up to their name as Breakthrough In Small Signal (BISS) transistors: They enable ultra-low saturation voltage down to 200mV at 6A, equivalent to an RCEsat of only 33mOhm.
* Covering the full range of voltages from 12V to 100V, the new PBSS*PA series achieves a peak collector current ICM of up 7A.
* This enables customers to replace transistors in larger packages with a product in SOT1061 and achieve similar performance on a reduced footprint.

Low VF Schottky rectifiers in SOT1061 (PMEG*EPA series)

* Offering high forward-current capability with low forward-voltage drop NXP Semiconductors‘ PMEG*EPA Schottky rectifiers are the first such devices housed in the leadless medium-power SOT1061.
* Five AEC-Q101 qualified single types are available with an average forward current up to 2A, and a reverse voltage range between 20V and 60V. In June, the product range will be extended by four dual rectifiers with 1 and 2A.
* With an integrated guard ring for stress protection these products deliver increased performance and efficiency than alternatives on the market.